Wyniki wyszukiwania - BazTech

Ograniczanie wyników

2 International Journal of Microelectronics and Computer Science

Znaleziono wyników: 2

Liczba wyników na stronie

Wyniki wyszukiwania

Sortuj według:

Ogranicz wyniki do:

Design optimisation of the deep trench termination for superjunction power devices

Noblecourt S., Morancho F., Isoird K., Austin P., Tasselli J.

International Journal of Microelectronics and Computer Science

2015

Vol. 6, nr 4

117--123

Among the numerous solutions developed to improve the voltage handling capability of superjunction power devices, the Deep Trench Termination (DT2) is the most adapted thanks to its lower cost and size compared to other technologies using the multiple epitaxy technique, and an easier implementation in the fabrication process. This paper presents the optimization of the Deep Trench Termination by means of TCAD 2D and 3D-simulations allowing the realization of deep trench superjunction devices (diodes and MOS transistors) for 1200 V applications. The work is focused on the influence of the dielectric passivation layer thickness and the field plate length on the breakdown voltage of a DT-SJDiode.

Analysis in Commutation of a New High Voltage Thyristor Structure for High Temperature

Toulon G., Bourennane A, Isoird K

International Journal of Microelectronics and Computer Science

2013

Vol. 4, nr 2

49--54

In this paper, a high voltage thyristor structure using Schottky contacts on the anode side is analysed through 2D physical simulations in terms of switching performance. The replacement of the P emitter of a conventional symmetrical thyristor by a judicious association of P diffusions and Schottky contacts at the anode side contributes to the reduction of the leakage current in the forward direction and hence improves the forward blocking voltage at high temperature while maintaining its reverse blocking capability. It is shown by comparing this structure with a conventional thyristor, that the presence of Schottky contact does not degrade the turn-on process. It is also shown that the presence of Schottky contact reduces the device turn-off time, improving the maximum operating frequency of the device.