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Rotational anisotropy in exchange-biased NiFe/FeMn bilayers

Hwang D. G.

Materials Science

2003

Vol. 21, No. 1

39-45

The anisotropic magnetoresistance (AMR) model was improved in order to determinate the magnitude and direction of the rotational anisotropy in NiFe/FeMn bilayer structures having different thicknesses of the ferromagnetic and antiferromagnetic layers. There are in our model two important parameters, namely the ratios ? = Hrot/Hex and ß=?rot/?a, where Hrot, and are the effective magnetic field and the angle of the rotational anisotropy, and Hex and ?a are the exchange bias field and the angle of applied field. These parameters describe the magnitude and direction of the rotational anisotropy. As the thickness of FeMn layer decreased up to 3.5 nm, the value increased from about 0.15 to 0.55. This proves that the regions of a weak exchange coupling extended as the antiferromagnetic layer thickness decreases. The ? and ß almost did not change as the NiFe layer thickness increased from 7 nm up to 15 nm, even the Hex was then reduced from 170 Oe to 70 Oe.

Angular dependencies of longitudinal magnetoresistivity and planar hall effect of single and multilayered thin films

Ko T. W., Lee J. H., Park B. K., Jang P. W., Hwang D. G., Lee S. S., Kim M. Z., Rhee J. R.

Electron Technology

1998

Vol. 31, No. 1

70-79

Magnetoresistivity and planar Hall effect of a Glass/Fe₇₀Å/(Co₂₁Å/Cu₂₅Å)₂₀ multilayer coupled antiferromagnetically a single layer (Co₈₁Nb₁₉) thin film, and NiO based Glass/NiO₃₅Å/Py₅₀Å/Cu₂₀Å/Py₅₀Å spin valve spin valve are studied. Planar Hall resistivity is analyzed concurrently with the resistivity of each sample. With variation of direction and strength of the applied fields, we found thwt the magnetization process affects significantly the planar Hall effect. We devwloped a simple method to find the easy axis of single layer magnetic thin films. We also observed the variation of magnetization of each layer separately for an antiferromagnetically coupled multilayer, and a NiO-based spin valve with the planar Hall effect.