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Status of long-wave Auger suppressed HgCdTe detectors operating > 200 K

Martyniuk P., Gawron W., Stępień D., Pawluczyk J., Kębłowski A., Madejczyk P., Kopytko M., Koźniewski A.

Opto-Electronics Review

2015

Vol. 23, No. 4

278-286

We report on the status of long-wave infrared Auger suppressed HgCdTe multilayer structures grown on GaAs substrates designed for high operating temperature condition: 200-300 K exhibiting, detectivity ~10¹¹ cmHz¹/² /W, time response within a ~120 ps range at 230 K. Abnormal responsivity within the range of ~30 A/W for electrical area 30×30 μm² under reverse bias V = 150 mV is reported. Maximum extraction coefficient of ~2.3 was estimated for analysed structures.

MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions

Martyniuk P., Koźniewski A., Kębłowski A., Gawron W., Rogalski A.

Opto-Electronics Review

2014

Vol. 22, No. 2

118-126

The paper reports on photoelectrical performance of the mid-wave infrared HgCdTe detector for high operating temperature condition. Detector structure was simulated with APSYS numerical platform by Crosslight Inc. The comprehensive analysis of the detector performance such as dark current, detectivity, time response vs. device architecture and applied bias has been performed. The N⁺pP⁺n⁺ HgCdTe heterostructure photodiode operating in room temperature at a wavelength range of 2.6–3.6 μm enabled to reach: detectivity ~ 8.7×10¹⁰ cmHz¹/²/W, responsivity ~ 1.72 A/W and time response ~ 145 ps(V = 200 mV).