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Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

Sadoun A., Mansouri S., Chellali M., Lakhdar N., Hima A., Benamara Z.

Materials Science Poland

2019

Vol. 37, No. 3

496--502

In this work, we have presented a theoretical study of Au/Ni/GaN Schottky diode based on current-voltage (I-V) measurement for temperature range of 120 K to 400 K. The electrical parameters of Au/Ni/GaN, such as barrier height (Φb), ideality factor and series resistance have been calculated employing the conventional current-voltage (I-V), Cheung and Chattopadhyay method. Also, the variation of Gaussian distribution (P (Φb)) as a function of barrier height (Φb) has been studied. Therefore, the modified [formula] relation has been extracted from (I-V) characteristics, where the values of ΦB0 and A+Simul have been found in different temperature ranges. The obtained results have been compared to the existing experimental data and a good agreement was found.