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1

Microthermomechanical infrared sensors

Steffanson M., Rangelow I. W.

Opto-Electronics Review

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2014

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Vol. 22, No. 1

1-15

EN

We present a state-of-the-art overview of microthermomechanical infrared sensor technology. The working principle of this sensor is based on a bi-material actuated micromechanical deflection, generated by an induced temperature rise due to incident infrared radiation absorption. In order to generate a thermal image the thermomechanical deflections of the freestanding microstructures are read by either capacitive, piezoresistive or optical means. Research and development activities in this field began in the early 1990s. The development of this technology within the last 20 years has resulted in innovations such as uncooled multiband infrared detection, high-speed infrared sensing and uncooled THz imaging. This paper outlines representative milestones of this technology and analyses important results of notable groups. Significant activities on capacitive and optical readout techniques of thermomechanical infrared arrays are presented. Furthermore the advantages of microthermomechanical infrared sensors over current well-established uncooled infrared technologies are summarized. In conclusion the latest developments of this technology offer a highly potential solution for a variety of important energy-saving, safety and security applications.

2

Mikroskopia sił atomowych z zastosowaniem matryc mikrodźwigni sprężystych

Zawierucha P., Zielony M., Kopiec D., Woszczyna M., Sarov Y., Frank A., Ivanov T., Zöllner J. P., Rangelow I. W., Gotszalk T.

Elektronika : konstrukcje, technologie, zastosowania

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2010

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Vol. 51, nr 6

72-75

PL

Mikroskopia sił atomowych (AFM) [1] jest jedną z podstawowych metod badania powierzchni. Pomimo bardzo szerokiego zastosowania w pomiarach laboratoryjnych w dalszym ciągu nie jest wykorzystywana w przemyśle. Związane jest to przede wszystkim z ograniczeń w szybkości wykonywania pojedynczego pomiaru. Jednym ze sposobów przyspieszenia pomiarów AFM jest zastosowanie zamiast pojedynczej sondy pomiarowej matrycy mikrodźwigni [2]. Jednoczesny pomiar wieloma dźwigniami pozwoli na relatywne skrócenie czasu pomiaru. Rozwiązanie takie pozwoli zachować wszystkie zalety pomiarów AFM jednocześnie umożliwiając wykonać pomiar powierzchni o rozmiarach nawet 10x10 mm². W pracy zaprezentowana zostanie dźwignia o zupełnie nowej konstrukcji, przeznaczona do zastosowań wielodźwigniowych. Prezentowana sonda pomiarowa przeznaczona jest do pracy w technice rezonansowej tapping-mode. Do przeprowadzenia eksperymentów konieczne było zbudowanie stanowiska pomiarowego. W pracy zaprezentowane zostanie stanowisko do pomiaru za pomocą matrycy 32 dźwigni. Wynikiem przeprowadzonych eksperymentów jest pomiar topografii powierzchni. W artykule przedstawiony zostanie obraz topografii struktury testowej wykonany 4 dźwigniami jednocześnie.

EN

Atomic force microscopy (AFM) is one of basic surface measurements methods. It is a uniquely powerful tool for analysis and modification of surface but this method is not used in technological application yet. Current AFM methods are limited to single probes with very slow processing rates and very small scan area. One of the speed-up methods of AFM measurement is the replacement of single a cantilevers by cantilever array [2]. A measurement taken by several probes simultaneously will significantly speed up the measurement process. The proposed solution allow to make a huge area scan (up to 10 x 10 mm²) and will keep all unique abilities of AFM method. In this article, we present new AFM cantilever (PRONANO) for multiprobe application. The new probe has integrated a thermal band actuator and a piezoresistive deflection detector. In this paper, we present an experimental system for topography measurement by 31 cantilevers. This home made multiprobe AFM microscope is designated for measurement in dynamic contact mode (tapping-mode). In this article, there are presented surface measurements made by 4 cantilevers simultaneously.

3

Ocena parametrów metrologicznych mikromechanicznych dźwigni piezorezystywnych

Woszczyna M., Janus P., Grabiec P., Kolek A., Gotszalk T., Rangelow I. W.

Elektronika : konstrukcje, technologie, zastosowania

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2008

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Vol. 49, nr 6

92-94

PL

W celu ilościowego opisu zjawisk zachodzących przy udziale mikromechanicznej dźwigni piezorezystywnej istotna jest znajomość podstawowych jej parametrów metrologicznych takich jak: stała sprężystości, czułość dźwigni na zadane wychylenie, a także właściwości szumowe typu termicznego oraz 1/f. Opisano proces kalibracji dźwigni sprężystej z mostkiem piezorezystywnym jako detektorem ugięcia.

EN

To obtain quantitative information about interactions between the micromechanical cantilever and its surrounding, it is crucial to determine the principlal metrological cantilever parameters such as: spring constant, response sensitivity for certain deflection and noise properties. In this article a calibration process of the cantilever with integrated piezoresistive deflection detector is presented.

4

Scanning probe microscopy as a metrology method in micro- and nanostructure investigations

Gotszlak T., Marendziak A., Kolanek K., Szeloch R., Grabiec P., Zaborowski M., Janus P., Rangelow I.W.

Bulletin of the Polish Academy of Sciences. Technical Sciences

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2006

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Vol. 54, nr 1

19-23

EN

Evolution of many high technologies such as microelectronics, microsystem technology and nanotechnology involves design, application and testing of technical structures, whose size is being decreased continuously. Scanning probe microscopes (SPM) are therefore increasingly used as diagnostic and measurement instruments. Consequently the demand for standardized calibration routines for this kind of equipment rises. Up to now, there bas been no in generally accepted guideline on how to perform SPM calibration procedure. In this article we discuss calibration scheme and focus on several critical aspects of SPM characterization e.g. the determination of the static and dynamic physical properties of the cantilever, the influence factors which need to be considered when plotting a scheme for the calibration of the force and displacement sensitivity.

5

Diagnostics of micro- and nanostructure using the scanning probe microscopy

Gotszalk T., Janusz P., Marendziak A., Czarnecki P., Radojewski J., Szeloch R. F., Grabiec P., Rangelow I. W.

Journal of Telecommunications and Information Technology

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2005

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nr 1

41-46

EN

In this paper we summarize the results of our research concerning the diagnostics of micro- and nanostructure with scanning probe microscopy (SPM). We describe the experiments performed with one of the scanning probe microscopy techniques enabling also insulating surfaces to be investigated, i.e., atomic force microscopy (AFM). We present the results of topography measurements using both contact and non-contact AFM modes, investigations of the friction forces that appear between the microtip and the surface, and experiments connected with the thermal behaviour of integrated circuits, carried out with the local resolution of 20 nm.

6

Application of scanning shear-force microscope for fabrication of nanostructures

Sikora A., Gotszalk T., Sankowska A., Rangelow I. W.

Journal of Telecommunications and Information Technology

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2005

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nr 1

81-84

EN

In view of the rapid growth of interest in AFM technique in surface property investigation and local surface modification we describe here an AFM microscope with optical tip oscillation detection. The modular shear-force/tunneling microscope for surface topography measurement and nanoanodisation is described. The measurement instrument presented here is based on the fiber Fabry-Perot interferometer for the measurement of the conductive microtip oscillation that is used as nano e-beam for local surface anodisation. An advantage of this system is that quantitative measurements of tip vibration amplitude are easily performed.

7

Przygotowanie mikroskopu sił atomowych do pomiarów nanochropowatości powierzchni rozpylanej jonami : wstęp do analizy fraktalnej

Marendziak A., Gotszalk T., Rangelow I. W., Wilk J., Kowalski Z. W.

Elektronika : konstrukcje, technologie, zastosowania

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2005

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Vol. 46, nr 6

15-17

PL

W opracowaniu przedstawiono wyniki wstępnych badań nad wpływem bombardowania jonowego na zmiany nanochropowatości powierzchni. Skoncentrowano się na podstawowych parametrach, opisujących cechy wertykalne profilu chropowatości, takich jak: średnie arytmetyczne odchylenie profilu chropowatości Ra i średnie kwadratowe odchylenie profilu Rq oraz na dwóch powszechnie stosowanych materiałach - stali nierdzewnej i tytanie. W badaniach stosowano jarzeniowe źródło z wnękową anodą, wytwarzające zneutralizowaną wiązkę jonów kryptonu o energii sięgającej kilku kiloelektronowoltów. Celem było badanie możliwości zastosowania opracowanego na Wydziale mikroskopu sił atomowych oraz oprogramowania do pomiarów nanochropowatości rozpylanej jonami powierzchni i w dalszej kolejności, jej analizy fraktalnej.

EN

This work presents results of initial studies on the influence of ion bombardment on surface nanoroughness modification. We concentrated on most often utilized in the world basic parameters describing vertical features of roughness profile, i.e.: arithmetical mean deviation of the surface profile Ra and the root mean square value of the surface roughness Rq as well as on two commonly used materials - stainless steel and titanium. In our research glow discharge ion gun with hollow anode generating neutralized krypton ion-beam with energy up to several keV was applied. The aim of the work was to investigate the possibility of application of atomic force microscope and software made in our department to nanoroughness measurements of ion sputtered surface and, in the next stage, after gathering sufficient amount of scientific material, its fractal analysis.

8

Metody mikroskopii bliskiego pola od mikro- do nanoelektroniki: diagnostyka, wytwarzanie

Gotszalk T., Sikora A., Kolanek K., Szeloch R., Szmidt J., Grabiec P., Rangelow I. W., Mitura S.

Elektronika : konstrukcje, technologie, zastosowania

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2005

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Vol. 46, nr 11

14-18

PL

Obserwowane obecnie tendencje w rozwoju systemów elektronicznych i tzw. mikrosystemów, które łączą w sobie zarówno funkcje przetwarzania sygnałów elektronicznych, jak i oddziaływań mechanicznych, chemicznych, itp. wyrażają się w znacznym zmniejszeniu tzw. wymiaru charakterystycznego do setek i dziesiątek nanometrów. W opracowaniu przedstawiono przegląd metod bliskiego pola zarówno w zastosowaniach diagnostycznych jak i technologicznych, które pozwalają zaspokoić skrajnie trudne warunki powstałe na drodze do nanoelektroniki, a ogólnie do nanotechnologii. Badania i wytwarzanie tego typu układów wymagają nowatorskiego podejścia, które musi uwzględniać prawa fizyki kwantowej.

EN

In last decades rapid progress in fabrication of integrated circuits and microsystems has been observed. Simultaneously novel problems connectec with measurements of such devices and microelectronical materials were defined. In our work we will describe the application of scanning probe microscopy based methods in measurements of physical properties of microelectronical devices and materials. We will present methdos and techniques, which were developed at the Faculty of Microsystem Electronic; and Photonics of Wroclaw University of Technology. In this experiments we used novel nearfield sensors and measurement electronics to describe quantitavely the surface properties. We will present preliminary results on fabrication of nanostructures, which can be applied as quantum electronical devices like: quantum points and single electron transistors.

9

Application of electrostatic force microscopy in nanosystem diagnostics

Gotszalk T. P., Grabiec P., Rangelow I. W.

Materials Science

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2003

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Vol. 21, No. 3

333-338

EN

The current state of art of electrostatic force microscopy is described in the paper. The principle of electrostatic force operation enabling one to analyse local voltage distribution and capacitance is pre-sented. The design and properties of electrostatic force microscopy microprobes are discussed. The application and manufacturing process of piezoresistive cantilevers with conductive tips and of silicon beams with metallic probe are presented. In order to show the capabilities of electrostatic force micros-copy methods of investigations of local voltage distribution on surfaces of microelectronic integrated circuits (IC) are described. Improvements of electrostatic force microscopy and of other electrical meth-ods based on scanning probe microscopy confirm an increasing interest in electrical probing at the nanometre scale.

10

Piezoresistive sensors for atomic force microscopy - numerical simulations by means of virtual wafer fab

Dębski T., Barth W., Rangelow I.W., Domański K., Tomaszewski D., Grabiec P., Jakubowski A.

Journal of Telecommunications and Information Technology

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2001

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nr 1

35-39

EN

An important element in microelectronics is the comparison of the modelling and measurements results of the real semiconductor devices. Our paper describes the final results of numerical simulation of a micromechanical process sequence of the atomic force microscopy (AFM) sensors. They were obtained using the virtual wafer fab (VWF) software, which is used in the Institute of Electron Technology (IET). The technology mentioned above is used for fabrication of the AFM cantilevers, which has been designed for measurement and characterization of the surface roughness, the texturing, the grain size and the hardness. The simulation are very useful in manufacturing other microcantilever sensors.

11

Fabrication and properties of the field emission array with self-alignment gate electrode

Barth W., Dębski T., Rangelow I.W., Grabiec P., Studzińska K., Zaborowski M., Mitura S., Biehl S., Hudek P., Kostic I.

Journal of Telecommunications and Information Technology

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2001

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nr 1

49-52

EN

A new method for the fabrication of field emission arrays (FEA) based on bulk/surface silicon micromachining and diamond-like-carbon (DLC) coating was developed. A matrix of self-aligned electron field emitters is formed in silicon by mean anisotropic etching in alkali solution of the front silicon film through micro holes opened in silicon oxide layer. The field emission of the fabricated emitter tips is enhanced by a diamond-like-carbon film formed by chemical vapor deposition on the microtips. Back side contacts are formed by metal patterning. Detailed Raman, Auger and TEM investigations of the deposited DLC films (nanocrystalline diamond smaller than 10 nm) will be presented. In this paper we discuss the problems related to the development of field emission arrays technology. We also demonstrate examples of devices fabricated according to those technologies.

12

Adsorption properties of porous silicon

Domański K., Grabiec P., Gotszalk T., Beck R.B., Dębski T., Rangelow I.W.

Journal of Telecommunications and Information Technology

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2001

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nr 1

53-56

EN

Porous silicon shows some interesting features for micromechanical applications. Some applications make use of its high surface-to-volume ratio. A capacitive gas or humidity sensor using the adsorption of gases on the porous surface can be easily fabricated. However an opportunity for more sensitive device is given by micromechanical structure. In this paper we report on the piezoresistive cantilever beam structure with porous silicon adsorbing spot as a gas sensor.

13

3-D silicon micromachining for AFM/LFM microprobe development

Grabiec P., Domański K., Dumania P., Studzińska K., Gotszalk T., Rangelow I. W., Sunyk R.

Electron Technology

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2000

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Vol. 33, No. 4

577-591

EN

Results of work on the development of microprobes for the simultaneous Atomic/Lateral Force Measurements (AFM/LFM) are presented. AFM/LFM microprobes for surface characterization were modelled using FEM, designed and fabricated using 3-D silicon processing sequence. Finally microprobes were evaluated by using them for characterization of the test surfaces.