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1 Journal of Telecommunications and Information Technology

1 2007

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Development of 3C-SiC MOSFETs

Bakowski M., Schöner A., Ericsson P., Strömberg H., Nagasawa H., Masayuki A.

Journal of Telecommunications and Information Technology

2007

nr 2

49-56

The paper reviews the development of the 3C-SiC MOSFETs in a unique development project combining the material and device expertise of HAST (Hoya Advanced Semiconductor Technologies) and Acreo, respectively. The motivation for the development of the 3C-SiC MOSFETs and the summary of the results from the lateral and vertical devices with varying size from single cell to 3×3 mm2 large devices are reviewed. The vertical devices had hexagonal and square unit cell designs with 2 žm and 4 žm channel length. The p-body was aluminum implanted and the source was nitrogen or phosphorus implanted. Low temperature Ti/W contacts were evaluated.