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2 2023

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Multi-technique characterisation of InAs-on-GaAs wafers with circular defect pattern

Boguski Jacek, Wróbel Jarosław, Złotnik Sebastian, Budner Bogusław, Liszewska Malwina, Kubiszyn Łukasz, Michałowski Paweł P., Ciura Łukasz, Moszczyński Paweł, Odrzywolski Sebastian, Jankiewicz Bartłomiej, Wróbel Jerzy

Opto-Electronics Review

2023

Vol. 31, Special Issue

art. no. e144564

The article presents the results of diameter mapping for circular-symmetric disturbance of homogeneity of epitaxially grown InAs (100) layers on GaAs substrates. The set of acceptors (beryllium) doped InAs epilayers was studied in order to evaluate the impact of Be doping on the 2-inch InAs-on-GaAs wafers quality. During the initial identification of size and shape of the circular pattern, non-destructive optical techniques were used, showing a 100% difference in average roughness between the wafer centre and its outer part. On the other hand, no volumetric (bulk) differences are detectable using Raman spectroscopy and highresolution X-ray diffraction. The correlation between Be doping level and circular defect pattern surface area has been found.

InAs light-to-heavy hole effective mass ratio determined experimentally from mobility spectrum analysis

Wróbel Jarosław, Umana-Membreno Gilberto A., Boguski Jacek, Złotnik Sebastian, Kowalewski Andrzej, Moszczyński Paweł, Antoszewski Jarek, Faraone Lorenzo, Wróbel Jerzy

Opto-Electronics Review

2023

Vol. 31, Special Issue

art. no. e144567

Careful selection of the physical model of the material for a specific doping and selected operating temperatures is a non-trivial task. In numerical simulations that optimize practical devices such as detectors or lasers architecture, this challenge can be very difficult. However, even for such a well-known material as a 5 μm thick layer of indium arsenide on a semiinsulating gallium arsenide substrate, choosing a realistic set of band structure parameters for valence bands is remarkable. Here, the authors test the applicability range of various models of the valence band geometry, using a series of InAs samples with varying levels of p-type doping. Carefully prepared and pretested the van der Pauw geometry samples have been used for magneto-transport data acquisition in the 20-300 K temperature range and magnetic fields up to ±15 T, combined with a mobility spectra analysis. It was shown that in a degenerate statistic regime, temperature trends of mobility for heavy- and light-holes are uncorrelated. It has also been shown that parameters of the valence band effective masses with warping effect inclusion should be used for selected acceptor dopant levels and range of temperatures.