Cooling-stimulated rebuilding process in CdS

• Autorzy: Pavlyk B. , Tsybulyak B.
• Konferencja: XIth International Seminar on Physics and Chemistry of Solids (11 ; 2005 ; Polska)
• Języki publikacji: EN

Abstrakty

EN

Most processes of defect structure rearrangement in semiconductors due to influence of external factors have thermoactivation nature. The others can be related to athermic processes. However, some effects (conductivity layer formation and electron emission from surface) on the basic faces of CdS single crystals were found under cooling process. These effects can not be explain by present theories. Our researches of dependence between the electron emission intensity with (0001)-face CdS crystals and the influence of external factors (external electric field directed along to surface, temperature of previous annealing) enabled to propose a mechanism of process conductive layer formation. It consists in rebuilding as minimum two metastable defects with different activation energies of electron desorption into vacuum.

Słowa kluczowe

EN

cooling of CdS crystals; conductive layer formation; rebuilding process

• Wydawca: Wydawnictwo Uniwersytetu Humanistyczno-Przyrodniczego im. Jana Długosza w Częstochowie
• Czasopismo: Prace Naukowe. Chemia i Ochrona Środowiska / Akademia im. Jana Długosza w Częstochowie
• Rocznik: 2005
• Tom: Vol. 10
• Strony: 5--12
• Opis fizyczny: Bibliogr. 8 poz., fig.

Twórcy

autor

Pavlyk B.

• Ivan Franko National Univeristy of Lviv, Department of Electronic, vul. Tarnavskogo 107, Lviv, 79017 Ukraine

autor

Tsybulyak B.

• Ivan Franko National Univeristy of Lviv, Department of Electronic, vul. Tarnavskogo 107, Lviv, 79017 Ukraine

Bibliografia

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