Silicon-germanium for ULSI

• Autorzy: Hall S. , Eccleston B.
• Języki publikacji: EN

Abstrakty

EN

The paper describes recent progress for the introduction of silicon-germanium, bipolar and field effect heterostructure transistors into mainstream integrated circuit application. Basic underlying concepts and device architectures which give rise to the desired performance advantages are described together with the latest state-of the-art results for HBT and MOSFET devices. The integration of such devices into viable HBT, BiCMOS and CMOS is reviewed. Other contributions that SiGe can make to enhance the performance of ULSI circuits are mentioned also.

Słowa kluczowe

EN

silicon-germanium; HBT; SiGe-CMOS

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2000
• Tom: nr 3-4
• Strony: 3--9
• Opis fizyczny: Bibliogr. 43 poz., rys.

Twórcy

autor

Hall S.

autor

Eccleston B.

• Department of Electrical Engineering & Electronics, Brownlow Hill, The University of Liverpool