Fundamentals of modelling of metal-isulator-semiconductor junction biased by dc voltage with superimposed small ac signal

• Autorzy: Sikorski S. , Jung W.
• Języki publikacji: EN

Abstrakty

EN

Theory of a non-ideal Schottky barrier biased by dc voltage with superimposed small ac signal is presented. Theoretical considerations based on general transport equations with boundary conditions taking into account properties of real Schottky barrier enabled derivation a formula on structure impedance. Computer program developed on basis of the presented theory makes possible full modelling of Schottky barrier junktion for various interface layer parameters, any doping profile and any frequency of small ac signal. The presented theory may by useful in determination of doping profile from C-V characteristic of Schottky barrier junction using mercury probe.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 4
• Strony: 481--493
• Opis fizyczny: Bibliogr. 4 poz.

Twórcy

autor

Sikorski S.

autor

Jung W.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland