Wzrost monokryształów antymonku galu w kierunku <111> oraz <100> metodą Czochralskiego

Mirowska, A.; Orłowski, W.; Bańkowska, A.; Hruban, A.

Artykuł - szczegóły

Tytuł artykułu

Wzrost monokryształów antymonku galu w kierunku <111> oraz <100> metodą Czochralskiego

Autorzy

Mirowska A. , Orłowski W. , Bańkowska A. , Hruban A.

Treść / Zawartość

Pełne teksty:

httpwww_bg_utp_edu_plartme20nr2022009me22009mirowska.pdf

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Identyfikatory

Warianty tytułu

Growth of gallium antimonide single crystals in <111> and <100> directions by Czochralski method

Języki publikacji

Abstrakty

Do otrzymywania monokryształów antymonku galu o orientacji <111> oraz <100> zastosowana została zintegrowana z syntezą in-situ zmodyfikowana metoda Czochralskiego. Zbadano wpływ parametrów technologicznych procesu wzrostu na własności elektryczne niedomieszkowanych monokryształów GaSb. Uzyskano niedomieszkowane monokryształy GaSb typu p o koncentracji dziur w zakresie 1 ÷ 2 x 10^17 cm -³ i ruchliwości 600 ÷ 700 cm²/Vs (w 300 K). Przeprowadzono również próby domieszkowania na typ n oraz typ p. Zbadano wpływ koncentracji domieszki (Te, Si), jak też sposobu jej wprowadzania (Si), na własności elektryczne otrzymanych kryształów.

The aim of this work was to find out technological conditions for growing undoped gallium antimonide (GaSb) single crystals in <111> and <100> direction. Integrated process of in-situ synthesis and modified Czochralski crystal growth has been applied. The influence of charge material purity as well as other technological parameters on electrical properties of GaSb crystals was investigated. Undoped gallium antimonide single crystals were obtained with carrier concentration in the range 1 ÷ 2xl0^17 cm -³ and carrier mobility 600 ÷ 700 cm²Vs. First attempts of doping GaSb were made. The influence of doping (the way of doping and dopant quantity) on crystal parameters was also investigated.

Słowa kluczowe

GaSb monokrystalizacja domieszkowanie własności elektryczne

GaSb crystal growth doping electrical properties

Wydawca

Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych

Czasopismo

Materiały Elektroniczne

Rocznik

2009

Tom

T. 37, nr 2

Strony

3--15

Opis fizyczny

Bibliogr. 49 poz., rys.

Twórcy

autor

Mirowska A.

autor

Orłowski W.

autor

Bańkowska A.

autor

Hruban A.

Instytut Technologii Materiałów Elektronicznych, ul.Wólczyńska 133, 01-919, Warszawa, aleksandra.mirowska@itme.edu.pl

Bibliografia

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Bibliografia

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