The Effect of Silicon Orientation on Thickness and Chemical Bonding Configuration of SiOxNy Thin Films

• Autorzy: Ismael M. M.
• Języki publikacji: EN

Abstrakty

EN

Fourier Transform Infrared (FTIR) Spectroscopy and Capacitance-Voltage measurements are used to characterize the chemical bonding configuration and crystallographic orientations for SiOxNy thin films grown by glass assisted CO2 laser. FTIR spectra detected the Si-O and Si-N strongest absorption bands are close to each other at wave number in the range (700-1000 cm-1) depending on silicon substrates, and Si-O stretching bond at wave number around (~1088.285 cm-1) with a FWHM of 73.863 cm-1 for the two samples, the presences of hydrogen impurities like Si-H and N-H in the films were also identified and calculated. From C-V measurement film thickness were calculated and found to be 19.2 and 17.2 nm for SiOxNy/Si(111) and SiOxNy/Si(100) respectively. From the flat band voltage of -5.4 and -1.3 measured the two samples, their interface trap densities were found to be 1.4 × 1013 and 1.57 × 1013 ev-1•cm-2 respectively.

Słowa kluczowe

EN

Glass assisted CO2 laser; Silicon substrate; SiOxNy Thin Film

• Wydawca: Przedsiębiorstwo Wydawnictw Naukowych "DARWIN"
• Czasopismo: International Letters of Chemistry, Physics and Astronomy
• Rocznik: 2013
• Tom: Vol. 14
• Strony: 1--9
• Opis fizyczny: Bibliogr. 22 poz., rys., tab.

Twórcy

autor

Ismael M. M.

• Physics Department, College of Science, University of Salahaddin, Erbil, Kurdistan, Iraq

Bibliografia

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