Wannier-Stark effect and electron-phonon interaction in macroporous silicon structures with SiO₂ nanocoatings

• Autorzy: Karachevtseva L. , Goltviansky Y. , Kolesnyk O. , Lytvynenko O. , Stronska O.

Identyfikatory

DOI

10.2478/s11772-014-0199-6

• Języki publikacji: EN

Abstrakty

EN

We investigated the contribution of electron-phonon interaction to the broadening parameter of the Γ Wannier-Stark lader levels in oxidized macroporous silicon structures with different concentration of Si-O-Si states (TO and LO phonons). The obtained value of the Wannier-Stark ladder Γ parameter is much less than the djacent level energy evaluated from giant oscillations of resonance electron scattering on the surface states. We determined the influence of broadening on the oscillation amplitude in IR absorption spectra as interaction of the surface multi-phonon polaritons with scattered electrons. This interaction transforms the resonance electron scattering in samples with low concentration of Si-O-Si states into ordinary scattering on ionized impurities for samples with high concentration of Si-O-Si states. The transformation takes place at the scattering lifetime coinciding with the period of electron oscillations in the surface electric field.

Słowa kluczowe

EN

Wannier-Stark effect; electron-phonon interactions; macroporous silicon structures; SiO2 nanocoatings

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2014
• Tom: Vol. 22, No. 4
• Strony: 201--206
• Opis fizyczny: Bibliogr. 18 poz., wykr.

Twórcy

autor

Karachevtseva L.

• V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky Pr., 03028 Kyiv, Ukraine

autor

Goltviansky Y.

autor

Kolesnyk O.

autor

Lytvynenko O.

autor

Stronska O.

Bibliografia

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