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Tytuł artykułu

Improving color uniformity and color rending index of remote-phosphor packaging white LEDs by co-doping SiO2 and Sr2Si5N8:Eu2+ particles

Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Based on some advantageous properties, such as fast response time, environment friendliness, small size, long lifetime, and high efficiency, white LEDs are increasingly used in common illumination applications. In this research, by co-doping of redemitting Sr2Si5N8:Eu2+ phosphor and adding SiO2 particles to yellow-emitting YAG:Ce phosphor compounds, a new approach for improving color uniformity and color rending index of remote-phosphor structure white LEDs is proposed and demonstrated. The obtained results clearly indicate that the color rendering index (CRI) and color uniformity (DCCT) significantly depend on Sr2Si5N8:Eu2+ concentration. The results provide a potential practical solution for manufacturing remote-phosphor white LEDs (RP-WLEDs) in the near future.
Wydawca
Rocznik
Strony
370--374
Opis fizyczny
Bibliogr. 18 poz., rys.
Twórcy
  • Optoelectronics Research Group, Faculty of Electrical and Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City, Vietnam
  • Optoelectronics Research Group, Faculty of Electrical and Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City, Vietnam
autor
  • Power System Optimization Research Group, Faculty of Electrical and Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City, Vietnam
autor
  • Optoelectronics Research Group, Faculty of Electrical and Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City, Vietnam
autor
  • Optoelectronics Research Group, Faculty of Electrical and Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City, Vietnam
Bibliografia
  • [1] GUAN A., MO F., CHEN P., GENG Y., CHEN Q., ZHOU L., J. Disp. Technol., 12 (2016), 200.
  • [2] LAW T.K., IEEE T. Device Mat. Re., 16 (2016), 576.
  • [3] SANTA C., ROY T., MAJUMDER K., YADAV A.,J.Exp. Nanosci., 9 (2014), 776.
  • [4] MARKUS S., ROSENTHAL T., OECKLERA O., SCHNICK W., Crit. Rev. Solid State, 39 (2014), 215.
  • [5] LIU L., XIE J., HIROSAKI N., TAKEDA T., ZHANG C., LI J., SUN X., Sci. Technol. Adv. Mat., 12 (2011), 034404.
  • [6] SHUAI Y., HE Y., TRAN N.T., SHI F.G., IEEE Photonic. Tech. L., 23 (2011), 137.
  • [7] YU H., ZI W., LAN S., ZOU H., GAN S., XU X., HONG G., Mater. Res. Innov., 16 (2012), 298.
  • [8] QUOC A.N.D., LAI M.F., MA H.Y., LEE H.Y., J. Chin. Inst. Eng., 38 (2015), 297.
  • [9] LAI M. F., QUOC A.N.D., MA H.Y., LEE H.Y., J. Chin. Inst. Eng., 39 (2016), 468.
  • [10] YING S., SHIU A., Appl. Optics, 54 (2015), 28.
  • [11] LI C., RAO H., ZHANG W., ZHOU C., ZHANG Q., ZHANG K., J. Disp. Technol., 12 (2016), 255.
  • [12] KIM J.K., LUO H., SCHUBERT E.F., CHO J., SONE C., PARK Y., J. Appl. Phys., 44 (2005), 649.
  • [13] LUONG D., ZHANG W., LEE H., J. Alloy. Compd., 509 (2011), 7525.
  • [14] PIAO X., HORIKAWA T., HANZAWA H., MACHIDA K., Appl. Phys. Lett., 88 (2006), 219.
  • [15] HAYK N., WON H.I., WON C.W.,Chem.Commun.,47 (2011), 43.
  • [16] ZHANG B., WANG J, HAO L., XU X., AGATHOPOULOS S., YIN L., WANG C., HINTZEN H.,J.Am.Ceram. Soc., 100 (2016), 257.
  • [17] ZHONG J., XIE M., OU Z., ZHANG R., HUANG M., ZHAO F., In Proceedings of Symposium on Photonics and Optoelectronics (2011), Wuhan, 2011, 1.
  • [18] TAPANINEN O.,17th InternationalConferenceonThermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Montpellier, 2016.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-fff66723-d564-4214-b8ac-5467cf52bbfc
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