Comparative studies of the optical absorption coefficient spectra in the implanted layers in silicon with the use of nondestructive spectroscopic techniques

• Autorzy: Dorywalski Krzysztof , Chrobak Łukasz , Maliński Mirosław

Identyfikatory

DOI

10.24425/mms.2020.132778

• Języki publikacji: EN

Abstrakty

EN

This work presents results of comparative studies of the optical absorption coefficient spectra of ion implanted layers in silicon. Three nondestructive and noncontact techniques were used for this purpose: spectroscopic ellipsometry (SE), modulated free carriers absorption (MFCA) and the photo thermal radiometry (PTR). Results obtained with the ellipsometric method are the proof of correctness of the results obtained with the MFCA and PTR techniques. These techniques are usually used for investigations of recombination parameters of semiconductors. They are not used for investigations of the optical parameters of semiconductors. Optical absorption coefficient spectra of Fe₊ and Ge₊ high energy and dose implanted layers in silicon, obtained with the three techniques, are presented and compared.

Słowa kluczowe

EN

silicon; ion implantation; optical absorption coefficient spectra; modulated free carrier absorption; photo thermal radiometry; ellipsometry; nondestructive techniques

• Wydawca: Komitet Metrologii i Aparatury Naukowej PAN
• Czasopismo: Metrology and Measurement Systems
• Rocznik: 2020
• Tom: Vol. 27, nr 2
• Strony: 323--337
• Opis fizyczny: Bibliogr. 52 poz., rys., tab., wykr.

Twórcy

autor

Dorywalski Krzysztof

• Koszalin University of Technology, Faculty of Mechanical Engineering, Department of Mechatronics and Automation, Śniadeckich 2, 75-453 Koszalin, Poland

autor

Chrobak Łukasz

• Koszalin University of Technology, Faculty of Electronics and Computer Sciences, Śniadeckich 2, 75-453 Koszalin, Poland

autor

Maliński Mirosław

• Koszalin University of Technology, Faculty of Electronics and Computer Sciences, Śniadeckich 2, 75-453 Koszalin,Poland

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Uwagi

EN

1. We thank Dr. Nadezhda Kukharchyk for preparation of the silicon implanted samples and Evgeny Krüger from Universität Leipzig for performing ellipsometry measurements. K. Dorywalski gratefully acknowledges the partial funding by the National Science Centre, Poland, under grant no. 2018/02/X/ST5/02508.

PL

2. Opracowanie rekordu ze środków MNiSW, umowa Nr 461252 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2020).