Development and saturation investigation of MALO saturable absorber

• Autorzy: Młyńczak J. , Kopczyński K. , Mierczyk J. , Bajor A.

Identyfikatory

DOI

10.12915/pe.2014.12.13

Warianty tytułu

PL

Opracowanie i badania efektu nasycania nasycalnego absorbera MALO

• Języki publikacji: EN

Abstrakty

EN

The paper describes the investigation of saturation effect in newly developed MgAl2O4:Co saturable absorber with the aim of thermally bounding it with the active media such as erbium glasses. On the basis of the experimental results the most important parameters, from the point of view of laser generation, such as ground state absorption cross section, excited state absorption cross section and dissipative losses were calculated. The comparison of this parameters with the parameters presented in the literature was done showing the advantages of the newly developed saturable absorber over commercially available ones.

PL

Artykuł przedstawia badania efektu nasycania w nowo opracowanym nasycalnym absorberze MgAl2O4:Co. Absorber został opracowany z myślą o jego termicznym połączeniu z ośrodkiem aktywnym takim jak szkło erbowe. Na podstawie tych badań zostały wyznaczone podstawowe parametry nasycalnego absorbera (z punktu widzenia generacji laserowej) takie jak absorpcyjny przekrój czynny z poziomu podstawowego, absorpcyjny przekrój czynny z poziomu wzbudzonego oraz straty dysypacyjne. Przedstawiono porównanie wyznaczonych parametrów z parametrami przedstawianymi w literaturze stwierdzając pewną przewagę badanego nasycalnego absorbera nad dostępnymi komercyjnie.

Słowa kluczowe

EN

saturable absorber; ground state absorption cross section; "eye-safe" radiation

PL

nasycalny absorber; absorpcyjny przekrój czynny; promieniowanie bezpieczne dla oka

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Przegląd Elektrotechniczny
• Rocznik: 2014
• Tom: R. 90, nr 12
• Strony: 59--63
• Opis fizyczny: Bibliogr. 30 poz., rys., tab., wykr.

Twórcy

autor

Młyńczak J.

• nstitute of Optoelectronics, Military University of Technology, Kaliskiego 2 Str., 00-908 Warsaw, Poland

autor

Kopczyński K.

• Institute of Optoelectronics, Military University of Technology, Kaliskiego 2 Str., 00-908 Warsaw, Poland

autor

Mierczyk J.

• Institute of Optoelectronics, Military University of Technology, Kaliskiego 2 Str., 00-908 Warsaw, Poland

autor

Bajor A.

• Institute of Electronic Materials Technology, Wólczyńska 133 Str., 01-919 Warsaw, Poland

Bibliografia

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