Chemically synthesized PbS nanoparticulate thin films for a rapid NO2 gas sensor

• Autorzy: Burungale V. V. , Devan R. S. , Pawar S. A. , Harale N. S. , Patil V. L. , Rao V. K. , Ma Y. R. , Ae J. E. , Kim J. H. , Patil P. S.

Identyfikatory

DOI

10.1515/msp-2016-0001

• Języki publikacji: EN

Abstrakty

EN

Rapid NO₂ gas sensor has been developed based on PbS nanoparticulate thin films synthesized by Successive Ionic Layer Adsorption and Reaction (SILAR) method at different precursor concentrations. The structural and morphological properties were investigated by means of X-ray diffraction and field emission scanning electron microscope. NO₂ gas sensing properties of PbS thin films deposited at different concentrations were tested. PbS film with 0.25 M precursor concentration showed the highest sensitivity. In order to optimize the operating temperature, the sensitivity of the sensor to 50 ppm NO₂ gas was measured at different operating temperatures, from 50 to 200 degrees C. The gas sensitivity increased with an increase in operating temperature and achieved the maximum value at 150 degrees C, followed by a decrease in sensitivity with further increase of the operating temperature. The sensitivity was about 35 % for 50 ppm NO₂ at 150 degrees C with rapid response time of 6 s. T90 and T10 recovery time was 97 s at this gas concentration.

Słowa kluczowe

EN

NO2 sensor; PbS; XRD; SILAR

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2016
• Tom: Vol. 34, No. 1
• Strony: 204--211
• Opis fizyczny: Bibliogr. 31 poz., rys., tab.

Twórcy

autor

Burungale V. V.

• Thin Film Materials Laboratory, Department of Physics, Shivaji University Kolhapur-4 16004, M.S., India

autor

Devan R. S.

• Department of Physics, National Dong Hwa University, Hualien-97401, Taiwan, ROC

autor

Pawar S. A.

• Department of Materials Science and Engineering, Chonnam National University, Gwangju-500757, SouthKorea

autor

Harale N. S.

• Thin Film Materials Laboratory, Department of Physics, Shivaji University Kolhapur-4 16004, M.S., India

autor

Patil V. L.

• Thin Film Materials Laboratory, Department of Physics, Shivaji University Kolhapur-4 16004, M.S., India

autor

Rao V. K.

• Defence Research & Development Establishment, Jhansi Road, Gwalior 474002, India

autor

Ma Y. R.

• Department of Physics, National Dong Hwa University, Hualien-97401, Taiwan, ROC

autor

Ae J. E.

• Department of Materials Science and Engineering, Chonnam National University, Gwangju-500757, SouthKorea

autor

Kim J. H.

• Department of Materials Science and Engineering, Chonnam National University, Gwangju-500757, SouthKorea

autor

Patil P. S.

• Thin Film Materials Laboratory, Department of Physics, Shivaji University Kolhapur-4 16004, M.S., India

Bibliografia

• 1. http://www.airqualityontario.com/science/pollutants/nitrogen.php.
• 2. Llobet E., Molas G., Molinas P., Calderer J., Vilanova X., Brezmes J., Sueiras J.E., Correig X., J. Electrochem. Soc., 147 (2000), 776.
• 3. Shishiyanu S.T., Shishiyanu T.S., Lupan O.I., Sens. Actuators B, 113 (2006), 468.
• 4. Wang X., Miura N., Yamazoe N., Sens. Actuators B, 66 (2000), 74.
• 5. Maekawa T., Tamaki J., Miura N., Yamazoe N., Chem. Lett., 21 (1992), 639.
• 6. Xu C.N., Miura N., Ishida Y., Matsuda K., Yamazoe N., Sens. Actuators B, 65 (2000), 163.
• 7. Pedrosa J.M., Dooling C.M., Richardson T.H., Hyde R.K., Hunter C.A., Martin M.T., Camacho L., J. Mater. Chem., 9 (2002), 2659.
• 8. Wang X., Miura N., Yamazoe N., Sens. Actuators B, 66 (2000), 74.
• 9. Marquis B.T., Vetelino J.F., Sens. Actuators B, 77 (2001), 100.
• 10. Penza M., Tagliente M.A., Mirenghi L., Gerardo C., Martucci C., Cassano G., Sens. Actuators B, 50 (1998), 9. V. V. Burungale et al.
• 11. Penza M., Martucci C., Cassano G., Sens. Actuators B 50 (1998), 52.
• 12. Kim T.S., Kim T.B., Yoo K.S., Sung G.S., Jung H.J., Sens. Actuators B, 62 (2000), 102.
• 13. Baratto C., Faglia G., Comini E., Sberveglieri G., Taroni A., La Ferrara V., Quercia L., Di Francia G., Sens. Actuators B, 77 (2001), 62.
• 14. Connolly E.J., Timmer B., Pham H.T.M., Groeneweg J., Sarro P.M., Olthuis W., French P.J., Sens. Actuators B, 109 (2005), 44.
• 15. Suhiro J., Zhou G., Hara M., J. Phys. D Appl. Phys., 36 (2003), 109.
• 16. Chang H., Lee J.D., Lee S.M., Lee Y.H., Appl. Phys. Lett., 79 (2001), 3863.
• 17. Chopra S., Pham A., Gailard J., Parker A., Rao A.M., Appl. Phys. Lett., 80 (2002), 4632.
• 18. Yamazoe N., Sens. Actuators B, 108 (2005), 2.
• 19. Chen X., Jing X., Wang J., Liu J., Song D., Liu L., Superlattices Microstruct., 63 (2013), 204.
• 20. Lupan O.I., Shishiyanu S.T., Shishiyanu T.S., Superlattices Microstruct., 42 (2007), 375.
• 21. Kaci S., Keffous A., Hakouma S., Trari M., Mansri O., Menari H., Appl. Surf. Sci., 305 (2014), 740.
• 22. Liu H., Li M., Voznyy O., Hu L., Fu Q., Zhou D., Xia Z., Sargent E.H., Tang J., Adv. Mater., 26 (17) (2014), 2718.
• 23. Cheng T., Fang Z., Zou G., Hu Q., Hu B., Yang X., Zhang Y., Bull. Mater. Sci., 29 (7) (2006), 701.
• 24. Kamble A.S., Pawar R.C., Tarwal N.L., More L.D., Patil P.S., Mater. Lett., 65 (2011), 1488.
• 25. Kamble A.S., Pawar R.C., Patil J.Y., Suryavanshi S.S., Patil P.S., J. Alloy. Compd., 509 (2011), 1035.
• 26. Bai S., Zhang K., Luo R., Li D., Chen A., Liu C.C., J. Mater. Chem., 22 (2012), 12643.
• 27. You L., Sun Y.F., Ma J., Guan Y., Sun J.M., Du Y., Lu G.Y., Sens. Actuators B, 157 (2011), 401.
• 28. Afzal A., Cioffi N., Sabbatini L., Torsi L., Sens. Actuators B, 171 (2012), 25.
• 29. Belysheva T.V., Bogovtseva L.P., Kazachkov E.A., Serebryakova N.V., J. Anal. Chem., 58 (2003), 583.
• 30. Sahay P.P., Tewari S., J. Mater. Sci., 40 (2005), 4791.
• 31. Wetchakun K., Samerjai T., Tamaekong N., Liewhiran C., Siriwong C., Kruefu V., Wisitsoraat A., Tuantranontb A., Phanichphant S., Sens. Actuators B, 160 (2011), 580.

Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.