Deposition time and annealing effects on morphological and optical properties of ZnS thin films prepared by chemical bath deposition

• Autorzy: Chabou N. , Birouk B. , Aida M. S. , Raskin J. P.

Identyfikatory

DOI

10.2478/msp-2019-0043

• Języki publikacji: EN

Abstrakty

EN

Nanocrystalline zinc sulfide thin films were prepared on glass substrates by chemical bath deposition method using aqueous solutions of zinc chloride, thiourea ammonium hydroxide along with non-toxic complexing agent trisodium citrate in alkaline medium at 80 °C. The effect of deposition time and annealing on the properties of ZnS thin films was investigated by X-ray diffraction, scanning electron microscopy, optical transmittance spectroscopy and four-point probe method. The X-ray diffraction analysis showed that the samples exhibited cubic sphalerite structure with preferential orientation along 〈2 0 0〉 direction. Scanning electron microscopy micrographs revealed uniform surface coverage, UV-Vis (300 nm to 800 nm) spectrophotometric measurements showed transparency of the films (transmittance ranging from 69 % to 81 %), with a direct allowed energy band gap in the range of 3.87 eV to 4.03 eV. After thermal annealing at 500 °C for 120 min, the transmittance increased up to 87 %. Moreover, the electrical conductivity of the deposited films increased with increasing of the deposition time from 0.35 × 10⁻⁴ Ω·cm⁻¹ to 2.7 × 10⁻⁴ Ω·cm⁻¹.

Słowa kluczowe

EN

CBD; ZnS; complexing agents; stirring; annealing; free buffer layer

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2019
• Tom: Vol. 37, No. 3
• Strony: 404--416
• Opis fizyczny: Bibliogr. 42 poz., tab., rys.

Twórcy

autor

Chabou N.

• Renewable Energies Laboratory (LER)/Jijel University, Algeria

autor

Birouk B.

• Renewable Energies Laboratory (LER)/Jijel University, Algeria

autor

Aida M. S.

• Thin Films and Interfaces Laboratory, Constantine University, Algeria

autor

Raskin J. P.

• ICTEAM/Université Catholique de Louvain (UCL), Louvain-La-Neuve, Belgium

Bibliografia

• [1] HASSANIEN A.S., AKL A.A., Superlattice. Microstruct, 89 (2016), 153.
• [2] HUANG Y.-H., JIE W.-Q., ZHOU Y., ZHA G.-Q., J. Alloy. Compd, 549 (2013), 184.
• [3] DÍAZ REYE S.J., CASTILLOOJEDA R.S., SÁNCHEZES PÍNDOL A. R., curr. Appl, 15(2015), 103.
• [4] CHA J.H., KWON S.M., BAE J.A., YANG S.H., JEON C.W., J. Alloy. Compd, 708 (2017),562 .
• [5] LEI Y., CHEN F.F., LI R., XU J., Appl. Surf. Sci, 308 (2014), 206.
• [6] PIQUETTE E.C., BANDIC Z.Z., MCCALDIN J.O., MCGILL T.C., J. Vac. Sci. Technol. B, (1997).
• [7] KURBATOV D., KSHNYAKINA S., OPANASYUK A., MELNIK V., NESPRAVA V., Rom. J. Phys., 55 (2010), 213.
• [8] BOSCO J.P., DEMERS S.B., KIMBALL G.M., LEWIS N.S., J. Appl. Phys, 9 (2012).
• [9] WU X., LAI F., LIN L., LVJ., ZHUANG B., YAN Q., HUANG Z., Appl. Surf. Sci., 254 (2008), 6455.
• [10] XU G., MIAO C., LIU G., YE C., J. Mater. Chem.,11 (2012), 4890.
• [11] LIU T.Z., KE H., ZHANG H., Mater. Sci. Semicond. Proc., 26 ( 2014), 301.
• [12] KHALIFA Z.S., MAHMOUD S.A., Physica E, 60 (2017), 91.
• [13] BHALERAO B.A., LOKHANDE D.C., WAGH G.B., Nanotechnol.,6 (2013), 996.
• [14] KRIISA M., KIIRBER E., KRUNKS M., Thin Solid Films, 87 (2014), 555.
• [15] HAUBI N.F., MIDHJIL K.A., RASHID H.G., MANSOUR H., Phys. Lett.,24 (2010).
• [16] SULTANA J., PAUL S., KARMAKAR A., YI R., DALAPATI G.K., CHATTOPADHYAY S., Appl. Surf. Sci., 418 (2017), 380.
• [17] LIU J., WEI A., ZHAO Y., J. Alloy.Compd., 588 (2014), 228.
• [18] HARISKOS D., SPIERING S., POWALLA M., Thin Solid Films, 480(2005), 99.
• [19] WOOK S.S., AGAWANE G.L., MYENG G.G., MOHOLKAR A.V., J. Alloy. Compd., (2012), 25.
• [20] SHIN S.W., AGAWANE G.L., GANGB M.G., MOHOLKARC A.V., MOON J.H., KIM J.H., LEE J.Y., J. Alloy. Compd., 526 (2012).
• [21] KASSIMA., NAGALINGAM S., Arabian J. Chem., 249 (2010), 234.
• [22] DUBROVIN. I.V., BUDENNAYA L.D., MIZETSKAYA I.B., SHARKINA, Inorg. Mater., 19 (1983), 1603.
• [23] LIANG G., FAN P., CHENC., LUO J., ZHAO J., ZHANG D., Mater. Electron., 26 (2015), 2230.
• [24] OZKAN M., EKEM N., PAT S., BALBA M.Z., Mater. Sci. Semicond. Proc., 15 (2012), 113.
• [25] LADAR M., POPOVICI E.J., BALDEA I., GRECU R., J. Alloy. Compd., 434 (2007), 697.
• [26] NAKADA T., FURUMI K., KUNIOKA A., IEEE Trans. Elec. Dev., 46 (1999) 2093.
• [27] KANG S.R., SHIN S.W., CHOI D.S., MOHOLKAR A.V., MOON J.H., KIM J.H., Curr. Appl. Phys, 10 (2010), 437.
• [28] SINGH J., John. Wiley. Sons, (2006).
• [29] NIEN Y.T., CHEN I.G., J. Alloy. Compd., 471 (2009), 553.
• [30] OBAID A.S., MAHDI M.A., AHMED DIHE A., HASSAN Z., Appl. Sci. Manag., 2012 (2012), 26.
• [31] LOKHANDE C.D., PATIL P.S., TRIBUTSCH H., ENNAOUI A., Sol. Eng. Mat. Sol. C., 55 (1998), 379.
• [32] KE H., DUO S., LIU T., SUN Q., RUAN C., FEI X., TANJ, ZHAN S., Mater. Sci. Semicond. Proc., 18 (2014), 28.
• [33] FATHY N., KOBAYASHI R., ICHIMURA M., Mater. Sci. Eng. B, 107 (2004), 271.
• [34] OFFIAH S.U., UGWOKE P.E., EKWEALOR A.B., EZUGWU S.C., OSUJI R.U., EZEMA F.I., Digest. J. Nanomater. Biostruct., 7 (2012), 165.
• [35] BREWE RS. H., FRANZEN S., J. Alloy. Compd., 338 (2002), 73.
• [36] ARENA O.L., NAIR M.T.S., NAIR P.K., Semicond. Sci. Technol., 12 (1997), 1323.
• [37] YANG H., ZHAO J., SONG L., Mater. Lett, 15 (2003), 2287.
• [38] KULKANI D., Bull. Mater. Sci., 28 (2005), 43.
• [39] DERBALIA A., SAIDIA H., ATTAFA A., BENAMRAAH., BOUHDJERA A., ATTAFBN., EZZAOUIAC H., J. Semicond, 9 (2018), 45.
• [40] BENDJEDIDI H., ATTAF A., SAIDI H., AIDA M.S., SEMMARI S.,BOUHDJAR A., BENKHETTA Y., J. Semicond., 36 (2015), 12.
• [41] AKL A.A., MAHMOUD S.A., AL-SHOMAR S.M., HASSANIEN A.S., Mater. Sci. Semicond. Proc., 74 (2018), 183.
• [42] HASSANIEN A.S., AKL A.A., J. Alloy. Compd,. 648 (2015), 280.

Uwagi

PL

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).