Role of nitrogen in carrier confinement potential engineering and optical properties of GaAs-based quantum wells heterostructures

• Autorzy: Pucicki D. , Bielak K. , Dawidowski W. , Ściana B. , Tłaczała M.

Identyfikatory

DOI

10.5277/oa160210

• Języki publikacji: EN

Abstrakty

EN

In this work, the authors present the results of optical characterization of GaAs-based multiple quantum well heterostructures, together with energy band structure analysis. The optical properties were investigated by applying photoluminescence spectroscopy. Structures with GaInNAs, GaInAs and GaNAs multiple quantum wells emitting around 1 μm, grown by atmospheric pressure metalorganic vapor phase epitaxy, were compared in this work. The role of nitrogen in quantum well carriers confinement potential was analysed. The photoluminescence intensities of the samples were correlated with the analysis of energy band structures and the overlaps of the carriers’ wave functions. In addition, the main carrier activation energies were estimated based on photoluminescence temperature dependence and the Arrhenius plots analysis. It was deduced that the thermal photoluminescence decay is most probably related to the escape of electrons whereas the holes, independently of the potential well depth, are additionally confined by the local inhomogeneities or by the Coulomb interaction with the confined electrons.

Słowa kluczowe

EN

dilute nitrides; optical properties; carrier confinement; photoluminescence

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2016
• Tom: Vol. 46, nr 2
• Strony: 255--263
• Opis fizyczny: Bibliogr. 14 poz., rys., tab.

Twórcy

autor

Pucicki D.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Bielak K.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Dawidowski W.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Ściana B.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Tłaczała M.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

Bibliografia

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• [2] ISHIKAWA F., TRAMPERT A., PLOOG K.H., Low substrate temperature and low As-pressure growth concept for the molecular beam epitaxial growth of 1.55 μ m (Ga,In)(N,As) multiple quantum wells, Journal of Crystal Growth 301–302, 2007, pp. 529–533.
• [3] BANK S.R., BAE H., GODDARD L.L., YUEN H.B., WISTEY M.A., KUDRAWIEC R., HARRIS J.S., Recent progress on 1.55-μ m dilute-nitride lasers, IEEE Journal of Quantum Electronics 43(9), 2007, pp. 773–785.
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• [8] DIRAC P.A.M., The quantum theory of the emission and absorption of radiation, Proceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character 114(767), 1927, pp. 243–265.
• [9] ALBO A., BAHIR G., FEKETE D., Improved hole confinement in GaInAsN-GaAsSbN thin double-layer quantum-well structure for telecom-wavelength lasers, Journal of Applied Physics 108(9), 2010, article 093116.
• [10] TANSU N., YEH J.-Y., MAWST L.J., Experimental evidence of carrier leakage in InGaAsN quantum-well lasers, Applied Physics Letters 83(11), 2003, pp. 2112–2114.
• [11] PUCICKI D., BIELAK K., KUDRAWIEC R., RADZIEWICZ D., ŚCIANA B., Determination of indium and nitrogen contents of InGaAsN quantum wells by HRXRD study supported by BAC calculation of the measured energy gap, Materials Science – Poland 31(4), 2013, pp. 489–494.
• [12] BISPING D., HOEFLING S., PUCICKI D., FISCHER M., FORCHEL A., Room-temperature singlemode continuous- wave operation of distributed feedback GaInNAs laser diode at 1.5 μm, Electronics Letters 44(12), 2008, pp. 737–738.
• [13] KUDRAWIEC R., MOTYKA M., ANDRZEJEWSKI J., MISIEWICZ J., GOLLUB D., FORCHEL A., Photoreflectance and photoluminescence study of step-like GaInNAs/GaInNAs/GaAs quantum wells, IEE Proceedings – Optoelectronics 151(5), 2004, pp. 313–316.
• [14] PUCICKI D., BIELAK K., ŚCIANA B., RADZIEWICZ D., LATKOWSKA-BARANOWSKA M., KOVÁČ J., VINCZE A., TŁACZAŁA M., Determination of composition of nonhomogeneous GaInNAs layers, Journal of Crystal Growth 433, 2016, pp. 105–113.

Uwagi

PL

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.