Evaluation of AlGaN/GaN heterostructures properties by QMSA and AFM techniques

• Autorzy: Szyszka A. , Wośko M. , Paszkiewicz B. , Tłaczała M.
• Języki publikacji: EN

Abstrakty

EN

Atomic force microscopy and Quantitative Mobility Spectrum Analysis (QMSA) were applied for characterization and evaluation of the quality of AlGaN/GaN heterostructures. The structural uniformity, growth mode and electrical properties of the heterostructures were determined. The obtained results indicated that the time of growth of the low temperature GaN nucleation layer influenced the morphology and electrical properties of the AlGaN/GaN heterostructure.

Słowa kluczowe

EN

AlGaN/GaN; Hall mobility; AFM; Quantive Mobility Spectrum Analysis

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2013
• Tom: Vol. 31, No. 4
• Strony: 543--547
• Opis fizyczny: Bibliogr. 16 poz., rys., tab.

Twórcy

autor

Szyszka A.

• Wroclaw University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego Street 11/17, 50-372 Wroclaw, Poland

autor

Wośko M.

• Wroclaw University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego Street 11/17, 50-372 Wroclaw, Poland

autor

Paszkiewicz B.

• Wroclaw University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego Street 11/17, 50-372 Wroclaw, Poland

autor

Tłaczała M.

• Wroclaw University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego Street 11/17, 50-372 Wroclaw, Poland

Bibliografia

• [1] BECK W. A., ANDERSON J. R., J. Appl. Phys. 62(1987), 541.
• [2] MEYER J. R., HOFFMAN C. A., ANTOSZEWSKI J.,FARAONE L., J. Appl. Phys. 81 (1997), 709.
• [3] ANTOSZEWSKI J., DELL J. M., L. FARAONE, TAN L.S., RAMAN A.,. CHUA S. J, HOLMES D. S., LINDEMUTH J. R., MEYER J. R., Mat. Sci. and Eng. B 44(1997), 65.
• [4] ANTOSZEWSKI J., SEYMOUR D. J., FARAONE L.,MEYER J. R., HOFFMAN C. A., J. Electron. Mater. 24(1995), 1255.
• [5] LISESIVDIN S. B., YILDIZ A., ACAR S., KASAP M.,OZCELIK S., OZBAY E., Appl. Phys. Lett. 91 (2007),102113.
• [6] MEYER J. R., HOFFMAN C. A., ANTOSZEWSKI J.,FARAONE L., J. Appl. Phys. 81 (1997), 709.
• [7] LIN Y., AREHART A. R., CARLIN A. M., RINGELB S.A., Appl. Phys. Lett. 93 (2008), 062109.
• [8] LISESIVDIN S. B., ALTUNTAS H., YILDIZ A.,KASAP M., OZBAY E., OZCELIK S., Superlattices and Microstructures 45 (2009), 604.
• [9] WEI W., Solid State Sciences 12 (2010), 789.
• [10] STEPHENSON G. B., EASTMAN J. A., THOMPSON C.,AUCIELLO O., THOMPSON L. J., MUNKHOLM A.,FINI P., DENBAARS S. P., SPECK J. S., Appl. Phys.Lett. 74 (1999), 3326.
• [11] LISESIVDIN S. B., ACAR S., KASAP M., OZCELIK S., GOKDEN S., OZBAY E., Semicond. Sci. Technol. 22(2007), 543.
• [12] LORENZ K., GONSALVES M., WOOK K.,NARAYANAN V., MAHAJAN S., Appl. Phys. Lett.77 (2000), 3391.
• [13] WICKENDEN A. E., KOLESKE D. D., HENRY R. L.,TWIGG M. E., FATEMI M., J. Crysc. Growth 260(2004), 54.
• [14] SMORCHKOVA I. P., ELSASS C. R., IBBETSON J. P.,VETURY R., HEYING B., FINI P., HAUS E., DENBAARS S.P., SPECK J. S., MISHRA U. K., J. Appl.Phys. 86 (1999), 4520.
• [15] NHAT LUANG D., HUYEN TUNG N., THANH TIEN N.,J. Appl. Phys. 109, (2011), 113711.
• [16] CAROSELLA F., FARVACQUE J. L., J. Phys.: Condens.Matter 20 (2008), 325210.