Phonon-assisted tunneling through a quantum dot coupled to magnetic leads

• Autorzy: Rudziński W
• Języki publikacji: EN

Abstrakty

EN

We study theoretically spin-polarized transport in double barrier tunneling junctions based on a single level quantum dot interacting with a local phonon mode. It is shown that the electron-phonon interaction gives rise to oscillations of the tunnel magnetoresistance (TMR). In asymmetrical junctions, the polaronic transport through the junction may lead to a significant suppression of the diode-like behavior. The case of negative effective charging energy is also analyzed numerically. It is shown in particular that for a mesoscopic diode an interplay between the single -electron cotunneling and the pair tunneling processes leads to inversion of TMR.

Słowa kluczowe

EN

quantum dot; spin-polarized tunnelling; phonons

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2008
• Tom: Vol. 26, No. 4
• Strony: 879--883
• Opis fizyczny: Bibliogr. 6 poz., wyk.

Twórcy

autor

Rudziński W

• Department of Physics, Adam Mickiewicz University, ul. Umultowska, 8561-614 Poznan, Poland

Bibliografia

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