Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg₁₋xCdxTe in wide temperature range

• Autorzy: Voitsekhovskii A. V. , Nesmelov S. N. , Dzyadukh S. M.

Identyfikatory

DOI

10.2478/s11772-014-0198-7

• Języki publikacji: EN

Abstrakty

EN

Influence of the CdTe content in a near-surface graded-gap layer on the admittance of MIS-structures fabricated on the basis of heteroepitaxial Hg₁₋xCdxTe (x = 0.22−0.23 and 0.31−0.32) films grown by molecular beam epitaxy was investigated in a wide temperature range. It is shown that a temperature drop from 77 K to 8 K results in a decrease of hysteresis of the capacitance-voltage (C−V) characteristics and a decrease of frequencies which corresponds to a high-frequency behaviour of C−V characteristics of MIS-structures based on n-HgCdTe (x = 0.22–0.23) with and without graded-gap layersand also for MIS-structures based on n-HgCdTe (x = 0.31–0.32). Temperature dependences of the resistance of the epitaxial film bulk and differential resistance of the space-charge region (SCR) in strong inversion mode were studied. The experimental results can be explained by the fact that for MIS-structures based on n-HgCdTe (x = 0.22–0.23) with the graded-gap layers and for MIS-structures based on n-HgCdTe (x = 0.31–0.32), the differential resistance of SCR is limited by Shockley-Read generation at 25–77 K. Differential resistance of SCR for MIS-structures based on n-HgCdTe (x = 0.22–0.23) without the graded-gap layers is limited by tunnelling through deep levels at 8–77 K.

Słowa kluczowe

EN

HgCdTe; MIS structure; admittance; graded-gap layer; differential resistance of space-charge region

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2014
• Tom: Vol. 22, No. 4
• Strony: 236--244
• Opis fizyczny: Bibliogr. 25 poz., wykr.

Twórcy

autor

Voitsekhovskii A. V.

• National Research Tomsk State University, 36 Lenina Ave., 634050 Tomsk, Russia

autor

Nesmelov S. N.

• National Research Tomsk State University, 36 Lenina Ave., 634050 Tomsk, Russia

autor

Dzyadukh S. M.

• National Research Tomsk State University, 36 Lenina Ave., 634050 Tomsk, Russia

Bibliografia

• 1. A. Rogalski, Infrared Detectors, 2nd. ed., CRC Press, Taylor & Francis Group, New York 2011.
• 2. J. Chu and A. Sher, Device Physics of Narrow Gap Semiconductors, Springer, New York, 2010.
• 3. A. Rogalski, Infrared Detectors, edited by A.V. Voitsekhovskii, Nauka, Novosibirsk, 2003. (Russian translation from English) (in Russian).
• 4. A.V. Voitsekhovskii and V. N. Davydov, Photoelectric MIS Structures Based on Narrow-Band Semiconductors, Radio I Svyaz’, Tomsk, 1990 (in Russian).
• 5. V.N. Ovsyk, G.L. Kuryshev, and Y.G. Sidorov, Matrix Photodetectors Infrared Range, Nauka, Novosibirsk, 2001 (in Russian).
• 6. V.S. Varavin, V.V.Vasiliev, A.V. Voitsekhovskii, and T.I. Zakhariash, “Photodiods with the low sequent resistance based on variband epitaxial layers CdxHg1–xTe”, Optical Journal 66, 69–72 (1999) (in Russian).
• 7. O.P. Agnihorti, C.A. Musca, and L. Faraone, “Current status and issues in the surface passivation technology of mercury cadmium telluride infrared detectors”, Semicond. Sci. Tech. 13, 839–845(1998).
• 8. V. Kumar, R. Pal, P.K. Chaudhury, B.L. Sharma, and V. Gopal, “A CdTe passivation process for long wavelength infrared HgCdTe photodetectors”, J. Electron. Mater. 34, 1225–1229 (2005).
• 9. A.V. Voitsekhovskii, S.N. Nesmelov, and S.M. Dzyadukh, “The influence of resistance of bulk of epitaxial films on capacitance-voltage characteristics of MIS-structures HgCdTe/AOF and HgCdTe/SiO2/Si3N4”, Russ. Phys. J. 48, No. 6, 584–591 (2005).
• 10. A.V. Voitsekhovskii, S.N. Nesmelov, S.M. Dzyadukh, V.S. Varavin, S.A. Dvoretskii, N.N. Mikhailov, Yu.G. Sidorov, and A.A. Vasil’ev, “Properties of MIS-structures based on graded-band HgCdTe grown by molecular beam epitaxy”, Semiconductors 42, 1327–1332 (2008).
• 11. V.N. Ovsyuk and A.V. Yartsev, “Analysis of voltage-capacitance curve of MIS-structure based on n- and p- MBE HgCdTe”, Proc. SPIE 6636, 663617 (2007).
• 12. V.V. Vasil’ev and Yu.P. Mashukov, “Capacitance-voltage characteristics of the p-Cd0.27Hg0.73Te-based structures with a wide-gap graded-gap surface layer”, Semiconductors 41, 37–42 (2007).
• 13. V.V. Vasil’ev and Yu.P. Mashukov, “Investigation of the MIS structures of the MBE CdxHg1-xTe – anodic oxide”, Applied Physics 4, 106–110 (2010) (in Russian).
• 14. A.A. Guzev, V.S. Varavin, S.A. Dvoretsky, A.P. Kovchavtsev, G.L. Kuryshev, I.I. Lee, Z.V. Panova, Yu.G. Sidorov, and M.V. Yakushev, “Photosensitive properties of In/ZnTe/CdTe/HgCdTe structures”, Applied Physics 2, 92–96 (2009) (in Russian).
• 15. M.W. Goodwin, M.A. Kinch, and R.J. Koestner, “Effects of defects on metal-insulator semiconductor properties of molecular-beam epitaxy grown HgCdTe”, J. Vac. Sci. Technol. A7, 523–527 (1989).
• 16. M.J. Yang, C.H. Yang, M.A. Kinch, and J.D. Beck, “Interface properties of HgCdTe metal-insulator-semiconductor capacitors”, Appl. Phys. Lett. 54, 265–267 (1989).
• 17. M. Zvara, R. Grill, P. Hlidek, et al. “Interface trap conductance spectroscopy of a narrow-gap Hg1–xCdxTe (x approximately = 0.2) MIS device”, Semicond. Sci. Tecnol. 10, 1145–1150 (1995).
• 18. M. Zvara, R. Grill, P. Hlidek, et al. “Magneto-conductance spectroscopy of a narrow-gap MIS device”, Semicond. Sci. Tecnol. 11, 1718–1724 (1996).
• 19. W. He and Z. Celik-Butler, “1/f noise and dark current components in HgCdTe MIS infrared detectors”, Solid-State Electron. 39, 127–132 (1996).
• 20. A.V. Voitsekhovskii, S.N. Nesmelov, and S.M. Dzyadukh, “Investigation into MIS structures based on gradedband-gap hetero-epitaxial HgCdTe grown by molecular-beam epitaxy using photo-emf and conductivity methods”, Russ. Phys. J. 52, 1003–1020 (2009).
• 21. V.I. Gaman, Physics of Semiconductor Devices, Publishing scientific and technical literature, Tomsk, 2000 (in Russian).
• 22. A.V. Voitsekhovskii, S.N. Nesmelov, S.M. Dzyadukh, V.S. Varavin, S.A. Dvoretskii, N.N. Mikhailov, Yu.G. Sidorov, and M.V. Yakushev, “Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe”, Opto-Electron. Rev. 18, 259–262 (2010).
• 23. A.V. Voitsekhovskii, S.N. Nesmelov, and S.M. Dzyadukh, “Capacitance-voltage characteristics of metal-insulator-semiconductor structures based on graded-gap HgCdTe with various insulators”, Thin Solid Films 522C, 261–266 (2012).
• 24. A.V. Voitsekhovskii, S.N. Nesmelov, and S.M. Dzyadukh, “Photoelectrical characteristics of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy”, Thin Solid Films. 551, 92–97 (2014).
• 25. M.A. Kinch, “Metal-insulator-semiconductor infrared detectors”, in Semiconductors and Semimetals, Vol. 18, pp. 313–378, edited by R.K.Willardson and A.C. Beer, Academic Press, New York, 1981.