Effect of working pressure on the structural, optical and electrical properties of titanium-gallium co-doped zinc oxide thin films

Zhang, T.; Zhong, Z.

Artykuł - szczegóły

Tytuł artykułu

Effect of working pressure on the structural, optical and electrical properties of titanium-gallium co-doped zinc oxide thin films

Autorzy

Zhang T. , Zhong Z.

Wybrane pełne teksty z tego czasopisma

Identyfikatory

Warianty tytułu

Języki publikacji

Abstrakty

The transparent conducting titanium-gallium co-doped zinc oxide (TGZO) thin films were grown on glass substrates by radio-frequency magnetron sputtering technique. The effects of working pressure on the structural, optical and electrical properties of the films were investigated. The results show that the deposited films are polycrystalline with a hexagonal wurtzite structure and highly textured along the c-axis perpendicular to the substrate. The TGZO film prepared at the working pressure of 0.4 Pa exhibits the best crystallinity, the maximal grain size, the highest transmittance, the lowest resistivity and the highest figure of merit. The optical constants of the films were calculated using the method of optical spectrum fitting. The dispersion behavior of the films was studied by the single-electronic oscillator dispersion model. The oscillator parameters and optical bandgaps were determined. The results demonstrate that the microstructure and optoelectrical properties of the TGZO films are dependent on the working pressure.

Słowa kluczowe

transparent conducting oxide ZnO thin films sputtering optoelectrical properties

Wydawca

De Gruyter

Czasopismo

Materials Science Poland

Rocznik

2013

Tom

Vol. 31, No. 3

Strony

454--461

Opis fizyczny

Bibliogr. 51 poz., tab., wykr.

Twórcy

autor

Zhang T.

Plasma Research Institute, South-Central University for Nationalities, Hubei, Wuhan 430073, People’s Republic of China

autor

Zhong Z.

zhongzhiyou@mail.scuec.edu.cn

Plasma Research Institute, South-Central University for Nationalities, Hubei, Wuhan 430073, People’s Republic of China
Hubei Key Laboratory of Intelligent Wireless Communications, South-Central University for Nationalities, Hubei, Wuhan 430073, People’s Republic of China

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Typ dokumentu

Bibliografia

Identyfikator YADDA

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