Luminescence of II–VI and III–V nanostructures

• Autorzy: Mynbaev K. D. , Shilyaev A. V. , Semakova A. A. , Bykhanova E. V. , Bazhenov N. L.

Identyfikatory

DOI

10.1016/j.opelre.2017.06.005

• Języki publikacji: EN

Abstrakty

EN

Photoluminescence of HgCdTe epitaxial films and nanostructures and electroluminescence of InAs(Sb,P) light-emitting diode (LED) nanoheterostructures were studied. For HgCdTe-based structures, the presence of compositional fluctuations, which localized charge carriers, was established. A model, which described the effect of the fluctuations on the rate of the radiative recombination, the shape of luminescence spectra and the position of their peaks, was shown to describe experimental photoluminescence data quite reasonably. For InAs(Sb,P) LED nanoheterostructures, at low temperatures (4.2–100 K) stimulated emission was observed. This effect disappeared with the temperature increasing due to the resonant ‘switch-on’ of the Auger process involving transition of a hole to the spin-orbit-splitted band. Influence of other Auger processes on the emissive properties of the nanoheterostructures was also observed. Prospects of employing II–VI and III–V nanostructures in light-emitting devices operating in the mid-infrared part of the spectrum are discussed.

Słowa kluczowe

EN

mid-infrared range; luminescence; nanostructures

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2017
• Tom: Vol. 25, No. 3
• Strony: 209--214
• Opis fizyczny: Bibliogr. 32 poz., wykr.

Twórcy

autor

Mynbaev K. D.

• Ioffe Institute, Saint-Petersburg, 194021, Russia
• ITMO University, Saint-Petersburg, 197101, Russia

autor

Shilyaev A. V.

• Ioffe Institute, Saint-Petersburg, 194021, Russia

autor

Semakova A. A.

• Ioffe Institute, Saint-Petersburg, 194021, Russia
• ITMO University, Saint-Petersburg, 197101, Russia

autor

Bykhanova E. V.

• Ioffe Institute, Saint-Petersburg, 194021, Russia
• ITMO University, Saint=Petersburg, 197101, Russia

autor

Bazhenov N. L.

• Ioffe Institute, Saint-Petersburg, 194021, Russia

Bibliografia

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Uwagi

EN

This article is an expanded version of a scientific report presented at the International Conference on Semiconductor Nanostructures for Optoelectronics and Biosensors 2016 ICSeNOB2016, May 22–25, 2016, Rzeszow, Poland

PL

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017)