Fabrication of CdMgTe/Cd(Mn)Te nanostructures with the application of high-resolution electron-beam lithography

• Autorzy: Bobko E. , Płoch D. , Wiater M. , Wojtowicz T. , Wróbel J.

Identyfikatory

DOI

10.1016/j.opelre.2017.04.005

• Języki publikacji: EN

Abstrakty

EN

In this work we report on fabrication of quantum wires and quantum point contacts from the modulation doped CdMgTe/Cd(Mn)Te structures, with the application of a high-resolution electron-beam lithography. We emphasize on methods which were not yet utilized for these substrate materials. In particular, we describe the so-called shallow-etching approach, which allows for the fabrication of quantum constrictions of a physical width down to 100 nm, which are characterized by the smoother confining potential as compared to the deep-etched devices. For that purpose, a single-line exposure mode of electron-beam lithography has been used. We demonstrate also, how to combine the etching of separating grooves with the thermal evaporation of metal side-gates into a single post-processing stage of a quantum point contact fabrication. This article is an expanded version of the scientific reports presented at the International Conference on Semiconductor Nanostructures for Optoelectronics and Biosensors 2016 ICSeNOB2016, May 22–25, 2016, Rzeszow, Poland.

Słowa kluczowe

EN

nanopatterning; electron beam lithography; wet etching; side gate

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2017
• Tom: Vol. 25, No. 2
• Strony: 65--68
• Opis fizyczny: Bibliogr. 12 poz., il.

Twórcy

autor

Bobko E.

• Faculty of Mathematics and Natural Sciences, Rzeszów University, al. Rejtana 16A, 35-959 Rzeszów, Poland
• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Płoch D.

• Faculty of Mathematics and Natural Sciences, Rzeszów University, al. Rejtana 16A, 35-959 Rzeszów, Poland

autor

Wiater M.

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Wojtowicz T.

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Wróbel J.

• Faculty of Mathematics and Natural Sciences, Rzeszów University, al. Rejtana 16A, 35-959 Rzeszów, Poland
• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

Bibliografia

• [1] R. Rungsawang, F. Perez, D. Oustinov, J. Gómez, V. Kolkovsky, G. Karczewski, T. Wojtowicz, J. Madéo, N. Jukam, S. Dhillon, J. Tignon, Terahertz radiation from magnetic excitations in diluted magnetic semiconductors, Phys. Rev. Lett. 110 (2013) 177203–177204.
• [2] C. Xia, H. Zhang, J. An, S. Wei, Y. Jia, Tunable built-in electric field and optical properties in wurtzite ZnO/MgZnO quantum wells, Phys. Lett. A 378 (2014) 2251-2255.
• [3] C. P. Dietrich, M. Lange, M. Stolzel, M. Grundmann, Microwire (Mg,Zn)O/ZnO and (Mg,Zn)O/(Cd,Zn)O non-polar quantum well heterostructures for cavity applications, Appl. Phys. Lett. 100 (2012), 031110-4.
• [4] T. Makino, Y. Segawa, A. Tsukazaki, H. Saito, S. Takeyama, S. Akasaka, K. Nakahara, M. Kawasaki, Magneto-photoluminescence of charged excitons from MgZnO/ZnO heterojunctions, Phys. Rev. B 87 (2016), 085312-8.
• [5] Y. Kim, A. Ourmazd, M. Bode, R. D. Feldman, Nonlinear diffusion in multilayered semiconductor systems, Phys. Rev. Lett. 63 (1989) 636-639.
• [6] M. Majewicz, D. Śnieżek, T. Wojciechowski, E. Baran, P. Nowicki, J. Wróbel, T. Wojtowicz, Low temperature processing of nanostructures based on II–VI semiconductors quantum wells, Acta Phys. Pol. A 126 (2014) 1174-1179.
• [7] M. Czapkiewicz, V. Kolkovsky, P. Nowicki, M. Wiater, T. Wojciechowski, T. Wojtowicz, J. Wróbel, Evidence for charging effects in CdTe/CdMgTe quantum point contacts, Phys. Rev. B 86 (2012) 165415-165419.
• [8] J. Wróbel, T. Dietl, A. Łusakowski, G. Grabecki, K. Fronc, R. Hey, K. H. Ploog, Shtrikman, Spin filtering in a hybrid ferromagnetic-semiconductor microstructure, Phys. Rev. Lett. 93 (2004) 246601-246604.
• [9] M. A. Mohammad, M. Muhammad, S. K. Dew, M. Stepanova, Fundamentals of electron beam exposure and development, in: M. Stepanova, S. Dew (Eds.), Nanofabrication, Springer, Vienna, 2012, pp. 11-41.
• [10] V. Srivastav, R. Pal, B. L. Sharma, A. Naik, D. S. Rawal, V. Gopal, H. P. Vyas, Etching of mesa structures in HgCdTe, J. Electron. Mater. 34 (2005) 1440-1445.
• [11] J. Wróbel, P. Zagrajek, M. Czapkiewicz, M. Bek, D. Sztenkiel, K. Fronc, R. Hey, H. Ploog, B. R. Bułka, Quantum effects in linear and nonlinear transport of T-shaped ballistic junction patterned from GaAs/AlxGa1−xAs heterostructures, Phys. Rev. B 81 (2010), 233306-6.
• [12] G. L. Snider, I. H. Tan, E. L. Hu, Electron states in mesa etched one-dimensional quantum well wires, J. Appl. Phys. 68 (1990) 2849-2853.

Uwagi

PL

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017)