Investigation on silicon solar cell capacitance and its dependence on both temperature and incidence angle

• Autorzy: Sané M , Barro F I
• Języki publikacji: EN

Abstrakty

EN

The aim of this work is to investigate a theoretical study of a vertical junction silicon solar cell capacitance under monochromatic illumination. By solving the continuity equation and using a one dimensional model in frequency modulation, we derive the analytical expressions of both excess minority carrier density and photovoltage. Based on these expressions, the solar cell capacitance was calculated; we then exhibited the effects of both temperature and incidence angle on the solar cell capacitance.

Słowa kluczowe

EN

vertical junction; capacitance; temperature; incidence angle

• Wydawca: Lublin University of Technology ; Polish Society of Ecological Engineering (PTIE), Branch of PTIE in Lublin
• Czasopismo: Advances in Science and Technology. Research Journal
• Rocznik: 2014
• Tom: Vol. 8, nr 24
• Strony: 9--12
• Opis fizyczny: Bibliogr. 12 poz., fig.

Twórcy

autor

Sané M

• Semiconductors and Solar Energy Laboratory, Faculty of Science and Technique, Cheikh Anta Diop University, BP5005, Dakar, Senegal

autor

Barro F I

• Semiconductors and Solar Energy Laboratory, Faculty of Science and Technique, Cheikh Anta Diop University, BP5005, Dakar, Senegal,

Bibliografia

• 1. Sze S.M., Kwok K.N.: Physics of semiconductors devices. Wiley, New York, NY, USA, 2007.
• 2. Sané M., Zoungrana M., Diallo H.L., Sahin G., Thiam N., Ndiaye M., Dieng M., Sissoko G.: Influence of incidence angle on the electrical parameters of a vertical silicon solar cell under frequency modulation. International Journal of Inventive Engineering and Sciences, Vol. 1(11), 2013, 37–40.
• 3. Sané M., Sahin G., Barro F.I., Maiga A.S.: Incidence angle and spectral effects on a vertical junction silicon solar cell capacitance. Turkish Journal of Physics, Vol. 38, 2014, 221–227.
• 4. Barro F.I., Sané M., Sahin G.: Silicon solar cell space charge region and capacitance behavior under electric field. Sylwan, Vol. 158(5), 58–66.
• 5. Sané M., Zouma B., Barro F.I.: New approach to determine vertical parallel junction silicon solar cell parameters. Research Journal of Applied Sciences, Engineering and Technology, Vol. 7(24), 2014, 5288–5292.
• 6. Mathieu H., Fanet H.: Physique des semiconducteurs et des composants électroniques. 6th Ed., Dunod, 2009.
• 7. Green M.A., Emery K., Hishikawa Y., Warta W.: Progress in photovoltaics. Research and applications, Vol. 18, 2010, 144–150.
• 8. Green M.A.: Solar energy. Material and Solar Cells. Vol. 92, 2008, 1305–1310.
• 9. Sané M.: Study of vertical junction polycristalline silicon solar cell in frequency modulation under monochromatic illumination with incidence angle. Doctorate Thesis, Department of Physics, Cheikh Anta Diop University, Dakar, Senegal, 2014.
• 10. Hu C.C.: Modern semiconductor devices for integrated circuits. Pearson/prentice Hall, New Jersey, 2010.
• 11. Boer K.W.: Introduction to space charge effects in semiconductor. Springer-Verlag, 2010.
• 12. Barsoukov E., Macdonald J.R., Impedance Spectroscopy: Theory, Experiment and Applications. Wiley: New York, 2005.