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In this paper, simulation studies on an N+−InAs0.61Sb0.13P0.26/n0−InAs0.97Sb0.03/P+−InAs0.61Sb0.13P0.26 double heterostructure laser diode suitable for use as a source in a free space optical communication system at 3.7 μm at room temperature has been presented. The device structure has been characterized in terms of energy band diagram, electric field profile, and carrier concentration profile using ATLAS simulation tool from Silvaco. The current-voltage characteristics of the structure have been estimated taking into account the degeneracy effect. The results of simulation have been validated by the reported experimental results.
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Czasopismo
Rocznik
Tom
Strony
147--151
Opis fizyczny
Bibliogr. 10 poz., wykr.
Twórcy
autor
- Department of Electronics and Instrumentation Engineering, Faculty of Engineering and Technology, MJP Rohilkhand University, Bareilly - 243 006 India
autor
- Centre for Research in Microelectronics (CRME), Department of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi - 221 005 India
Bibliografia
- 1. S. Narasimha Prasad, “Optical communications in the midwave IR spectral band”, J. Opt. Fiber Commun. Rep. 2, 558-602 (2005).
- 2. T.N. Danilova, A.N. Imenkov, V.V. Sherstnev, and Yu.P. Yakovlev, “InAsSb/InAsSbP double heterostructure lasers emitting at 3-4 μm: Part-I”, Semiconductors 34, 1343-1350 (2000).
- 3. T. Ashley, “Type-I InSb-based mid-infrared diode lasers”, Phil. Trans. R. Soc. Lond. A359, 475-488 (2001).
- 4. M. Yin, A. Krier, S. Krier, R. Jones, and P. Carrington, “Mid-infrared diode lasers for free space optical communications”, Proc. SPIE 6399, 63990C1-C6 (2006).
- 5. A. Krier, M. Yin, V. Smirnov, P. Batty, P.J. Carrington, V. Solovev, and V. Sherstnev, “Development of room temperature LED and lasers for the mid-infrared spectral region”, Phys. Stat. Ssol. A 205, 129-143 (2008).
- 6. Silvaco Inc., ATLAS user’s manual-A device simulator software, www.silvaco.com, 2005.
- 7. B. L. Sharma and R.K. Purohit, Semiconductor Heterojunctions, Pergamon Press, Oxford, 1974.
- 8. A. Rogalski, K. Adamiec, and J. Rutkowski, Narrow-Gap Semiconductor Photodiode, SPIE Press, Bellingham, 2000.
- 9. E.R. Gertner, D.T. Cheung, A.M. Andrews, and J.T. Longo, “Liquid phase epitaxial growth of InAsxSbyP1–x–y layers on InAs”, J. Electron. Mater. 6, 163-172 (1977).
- 10. M. Levinshtein, S. Rumyantsev, and M. Shur, Handbook Series on Semiconductor Parameters, vol.-2, World Scientific, Singapore, 1996.
Typ dokumentu
Bibliografia
Identyfikator YADDA
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