Silicon carbide based DC-DC converter – operating analysis

• Autorzy: Niewiara Ł. , Tarczewski T. , Grzesiak L. M.
• Konferencja: Computer Applications in Electrical Engineering (18-19.04.2016 ; Poznań, Polska)
• Języki publikacji: EN

Abstrakty

EN

In this paper operating analysis of DC-DC converter is presented. Silicon Carbide based DC-DC converter is investigated. SiC power switches (i.e. MOSFETs and diodes) were used. Synchronous buck topology is applied for converter structure. The DC-DC converter mathematical model is also presented. The parameters of LC circuit were calculated using shown equations. Working conditions determine the values of output LC circuit (inductance and capacitance). The analysis of working conditions is presented for different switching frequencies. The size of passive components (LC) is compared for different operating points. Experimental tests results were presented. Waveforms of voltage and current signals were also shown.

Słowa kluczowe

EN

DC\DC converter; SiC MOSFETS; high switching frequency

• Wydawca: Wydawnictwo Politechniki Poznańskiej
• Czasopismo: Poznan University of Technology Academic Journals. Electrical Engineering
• Rocznik: 2016
• Tom: No. 88
• Strony: 109--119
• Opis fizyczny: Bibliogr. 9 poz., rys., tab.

Twórcy

autor

Niewiara Ł.

• Nicolaus Copernicus University

autor

Tarczewski T.

• Nicolaus Copernicus University

autor

Grzesiak L. M.

• Warsaw University of Technology

Bibliografia

• [1] Zdanowski M., Rąbkowski J., Barlik R., Transformers. High frequency DC/DC converter with Silicon Carbide devices - simulation analysis, Przegląd Elektrotechniczny, nr 2/2014, 2014 (in Polish), pp. 201-204.
• [2] Biela J., Schweizer M., Waffler S., Kolar J.W., Sic versus Si; evaluation of potentials for performance improvement of inverter and Dc-Dc converter systems by Sic power semiconductors, IEEE Trans. Ind. Electron., 2011, 58, (7), pp. 2872-2882.
• [3] Bhatnagar M., Baliga B.J., Comparison of 6 h-Sic, 3c-Sic, and Si for power devices, IEEE Trans. Electron Devices, 1993, 40, (3), pp. 645-655.
• [4] Millan J., Godignon P., Perpinya X., Perez-Tomas A., Rebollo J., A survey of wide band gap power semiconductor devices, IEEE Trans. Power Electron., 2013, (99), p. 1.
• [5] Sira-Ramirez H., Silva-Ortigoza R., Control design techniques in power electronics devices, Springer, 2006, pp. 11-20.
• [6] Niewiara L.J., Tarczewski T., Skiwski M., Grzesiak L.M., 9-kW SiC based DC-DC converter, In Power Electronics and Applications (EPE'15 ECCE-Europe), IEEE, 2015, 17th European Conference on, pp. 1-9.
• [7] C2M0080120D SiC N-channel MOSFET datasheet, Rev. B, www.cree.com.
• [8] C4D10120A SiC schottky diode datasheet, Rev. B, www.cree.com.
• [9] Niewiara Ł.J., Skiwski M., Tarczewski T., Grzesiak L.M., Experimental study of snubber circuit design for SiC power MOSFET devices, Computer Applications in Electrical Engineering, Vol. 13, 2015, pp. 120-131.

Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.