AlSb and InAs-GaSb layer thickness effect on HH-LH splitting and band gap energies in InAs/AlSb/GaSb type-II superlattices

• Autorzy: Alyoruk M. M. , Ergun Y. , Hostut M.

Identyfikatory

DOI

10.1515/oere-2015-0001

• Konferencja: Advanced Infrared Technology and Applications - AITA 2013 (12 ; 10-13.09.2013 ; Turin, Italy)
• Języki publikacji: EN

Abstrakty

EN

This study is based on the investigation of AlSb layer thickness effect on heavy-hole light-hole (HH-LH) splitting and band gap energies in a recently developed N-structure based on InAs/AlSb/GaSb type II superlattice (T2SL) p-i-n photodetector.eFirst principle calculations were carried out tailoring the band gap and HH-LH splitting energies for two possible interface transition alloys of InSb and AlAs between InAs and AlSb interfaces in the superlattice. Results show that AlSb and InAs-GaSb layer thicknesses enable to control HH-LH splitting energies to desired values for Auger recombination process where AlSb/GaSb total layer thickness is equal to InAs layers for the structures with InSb and AlAs interfaces.

Słowa kluczowe

EN

InAs/AlSb/GaSb type-II SL structure; HH-LH splitting; N-structure; DFT; layer thickness effect

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2015
• Tom: Vol. 23, No. 1
• Strony: 24--27
• Opis fizyczny: Bibliogr. 14 poz., wykr.

Twórcy

autor

Alyoruk M. M.

• Dept. of Education, Dumlupinar University, 06800 Kutahya, Turkey

autor

Ergun Y.

• Dept. of Physics, Anadolu University, 26470 Eskisehir, Turkey

autor

Hostut M.

• Dept. of Education, Akdeniz University, 07058 Antalya, Turkey

Bibliografia

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Uwagi

EN

Y. Ergun acknowledges the support of TUBITAK and Anadolu University (Grants from Tubitak: 109T072 and BAP:1305F108, respectively). M. Hostut also acknowledges the support of Akdeniz University (BAP Grant: 2012.01.0110.002).