Resistive memory effect in a thin-film structure based on YBa2Cu3O7-x superconductor

• Autorzy: Gołębiowski J. , Waśkiewicz J.

Warianty tytułu

PL

Zjawisko pamięci rezystancyjnej w cienkowarstwowej strukturze na bazie nadprzewodnika YBa2Cu3O7-x

• Języki publikacji: EN

Abstrakty

EN

The paper presents results of the experimental research in which the electro-resistance memory effect have been observed in a thin-film structure based on a high-temperature YBa2Cu3O7-x superconductor exposed to electric current and an attempt to interpret the physical mechanism of that effect based on the processes of oxygen ion or electron trapping.

PL

W pracy przedstawiono wyniki badań doświadczalnych, w których zaobserwowano elektrorezystancyjne zjawisko pamięci w strukturze cienkowarstwowej opartej na nadprzewodniku wysokotemperaturowym YBa2Cu3O7-x poddanym działaniu prądu elektrycznego, oraz przeprowadzono próbę interpretacji mechanizmu fizycznego tego zjawiska w oparciu o procesy pułapkowania jonów tlenu albo elektronów.

Słowa kluczowe

EN

high-temperature superconductors; resistive memory effect; electro-resistance effect; current characteristic; temperature characteristics

PL

nadprzewodnik wysokotemperaturowy; zjawisko pamięci rezystancyjnej; zjawisko elektrorezystancyjne; charakterystyka prądowa; charakterystyka temperaturowa

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Przegląd Elektrotechniczny
• Rocznik: 2013
• Tom: R. 89, nr 8
• Strony: 83--86
• Opis fizyczny: Bibliogr. 15 poz., wykr.

Twórcy

autor

Gołębiowski J.

• Białystok University of Technology, Faculty of Electrical Engineering, ul. Wiejska 45d, 15-351 Białystok

autor

Waśkiewicz J.

• Białystok University of Technology, Faculty of Electrical Engineering, ul. Wiejska 45d, 15-351 Białystok

Bibliografia

• [1] Hu T., Xiao H., Visani C. et al., Stray field and the superconducting surface spin valve effect in La0.7Ca0.3MnO3/YBa2Cu3O7-δ bilayers, New Journal of Physics, 13 (2011), 033040(1-13)
• [2] Nemes N.M., Visani C., Leon C. et al., Magnetic memory based on La0.7Ca0.3MnO3/YBa2Cu3O7/La0.7Ca0.3MnO3 ferromagnet/superconductor hybrid structures, Applied Physics Letters, 97 (2010), n.3, 032501(1-3)
• [3] Deguchi H., Ashida T., Shoho T. et al., Magnetic memory effects in a chiral-glass phase of a superconductive ceramic YBa2Cu3O8, Journal of Physics: Conference Series, 320 (2011), 012076(1-5)
• [4] Shaltiel D., Nidda H-AK., Rosenstein B. et al., Field cooling memory effect in Bi2212 and Bi2223 single crystals, Superconductor Science and Technology, 23 (2010), n.7, 075001(1-6)
• [5] Morimoto M., Yoshimura T., Muracami H. et al., Fabrication of superconductive optical flux trap memory cell, Physica C, 357-360 (2001), 1607-1609
• [6] Genkin G.M., Nozdrin Yu.N., Okomel’kov A.V. et al., Memory effect and nonequilibrium resistive response in optically excited high-Tc YBa2Cu3O7-x superconducting thin films, Physics Letters A, 166 (1992), n.3-4, 279-85
• [7] Schulman A., Rozenberg M.J., Acha C., Anomalous time relaxation of the nonvolatile resistive state in bipolar resistiveswitching oxide-based memories, Physical Review B, 86 (2012), n.10, 104426(1-5)
• [8] Koval Y., Chowdhury F., Jin X. et al., Resistive memory switching in layered oxides: AnBnO3n+2 perovskite derivatives and Bi2Sr2CaCu2O8+δ high-Tc superconductor, Phys. Status Solidi A, 208 (2011), n.2, 284-299
• [9] Lin J.G., Hsu D., Wu W.F. et al., Development of random access memory in Nd0.7Ca0.3MnO3/YBa2Cu3O7 heterostructure, Thin Solid Films, 518 (2010), n.20, 5673-5675
• [10] Hanada A., Kinoshita K., Matsubara K. et al., Developmental mechanism for the resistance change effect in perovskite oxide-based resistive random access memory consisting of Bi2Sr2CaCu2O8+δ bulk single crystal, Journal of Applied Physics, 110 (2011), n.8, 084506(1-5)
• [11] Dedyk A.I., Karmanenko S.F., St.Petersburg Electrotechnical Univ., Russia, Private information
• [12] Rozenberg M.J., Sanchez M.J., Weht R. et al., Mechanism for bipolar resistive switching in transition-metal oxides, Physical Review B, 81 (2010), n.11, 115101(1-5)
• [13] Tomasek M., Plecenik T., Truchly M. et al., Temperature dependence of the resistance switching effect studied on the metal/YBa2Cu3O6+x planar junctions, Journal of Vacuum Science and Technology B, 29 (2011), n.1, 01AD04(1-5)
• [14] Tulina N.A., Borisenko I.Yu., Sirotkin V.V., Reproducible resistive switching effect for memory applications in heterocontacts based on strongly correlated electron systems, Physics Letters A, 372 (2008), n.44, 6681-6686
• [15] Acha C., Electric pulse-induced resistive switching in ceramic YBa2Cu3O7-δ/Au interfaces, Physica B, 404 (2009), n.18, 2746-2748