Influence of RF ICP PECVD process parameters of diamond-like carbon films on DC bias and optical emission spectra

• Autorzy: Oleszkiewicz W , Markowski J , Srnanek R , Kijaszek W , Gryglewicz J , Kovac J , Tlaczala M
• Języki publikacji: EN

Abstrakty

EN

The work presents the results of a research carried out with PlasmaLab Plus 100 system, manufactured by Oxford Instruments Company. The system was configured for deposition of diamond-like carbon films by ICP PECVD method. The change of an initial value of DC bias was investigated as a function of set values of the generator power (RF generator and ICP generator) in the constant power of the RF generator operation mode. The research shows that the value of DC bias nearly linearly depends on the RF generator power value and is affected only in a small degree by the power of ICP discharge. The capability of an installed OES spectrometer has been used to ensure the same starting conditions for the deposition processes of DLC films. The analysis of OES spectra of RF plasma discharge used in the deposition processes shows that the increase in ICP discharge power value results in the increased efficiency of the ionization process of a gaseous precursor (CH4). The quality of deposited DLC layers was examined by Raman spectroscopy. Basing on the acquired Raman spectra, the theoretical content of sp3 bonds in the structure of the film was estimated. The content is ranging from 30% to 65% and depends on ICP PECVD deposition process parameters.

Słowa kluczowe

EN

PECVD; diamond-like carbon layers; OES; Raman spectroscopy; AFM

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2013
• Tom: Vol. 43, nr 1
• Strony: 109--115
• Opis fizyczny: Bibliogr. 4 poz., rys., wykr.

Twórcy

autor

Oleszkiewicz W

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Markowski J

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Srnanek R

• Department of Microelectronics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia

autor

Kijaszek W

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Gryglewicz J

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Kovac J

• International Laser Center, Ilkovičova 3, 812 19 Bratislava, Slovakia

autor

Tlaczala M

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

Bibliografia

• [1] YU S.J., DING Z.F., XU J., ZHANG J.L., MA T.C., CVD of hard DLC films in a radio frequency inductively coupled plasma source, Thin Solid Films 390(1–2), 2001, pp. 98–103.
• [2] ROBERTSON J., Diamond-like amorphous carbon, Materials Science and Engineering R: Reports 37(4–6), 2002, pp. 129–281.
• [3] CASCHERA D., COSSARI P., FEDERICI F., KACIULIS S., MEZZI A., PADELETTI G., TRUCCHI D.M., Influence of PECVD parameters on the properties of diamond-like carbon films, Thin Solid Films 519(12), 2011, pp. 4087–4091.
• [4] WROCZYŃSKI P., BOGDANOWICZ R., GNYBA M., Optoelectronic system for investigation of CVD diamond/DLC layers growth, Advances in Materials Science 9(3), 2009, pp. 47–53.