A 2.3-dB NF CMOS low voltage LNA optimized for medical applications at 600MHz

• Autorzy: Borrego R
• Języki publikacji: EN

Abstrakty

EN

In this paper it is presented a balun LNA, with voltage gain control that combines a common-gate and common-source stage, in which transistors biased in triode region replace the resistive loads. This last approach in conjunction with a dynamic threshold reduction technique allows a low supply voltage operation. Furthermore, a significant chip area reduction can be exploited by adopting an inductor-less configuration. Simulations results with a 130 nm CMOS technology show that the gain is up to 19.3 dB and the NF is below 2.3 dB. The total dissipation is 4 mW, leading to an FOM of 2.26 for 0.6 V supply.

Słowa kluczowe

EN

DTMOS; balun; low voltage; low power

PL

DTMOS; balun; niskie napięcie; mała moc

• Wydawca: Lodz University of Technology. Department of Microelectronics and Computer Science
• Czasopismo: International Journal of Microelectronics and Computer Science
• Rocznik: 2013
• Tom: Vol. 4, nr 3
• Strony: 87--91
• Opis fizyczny: Bibliogr. 11 poz.

Twórcy

autor

Borrego R

• Department of Electrical Engineering, Faculty of Sciences and Technology
• Center of Technology and Systems (CTS-UNINOVA)

Bibliografia

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