Defect solitons supported by kagome photonic lattices in biased photovoltaic-photorefractive crystals

• Autorzy: Hui J. , Lu K. , Zhao C. , Gao L. , Chen W.

Identyfikatory

DOI

10.5277/oa180302

• Języki publikacji: EN

Abstrakty

EN

We report that defect solitons can be supported by kagome photonic lattices with a defect in biased photovoltaic-photorefractive crystals. For a positive defect, these defect solitons exist only in the semi-infinite bandgap and are stable in the low power region but unstable in the high power region. For a negative defect, these defect solitons exist in both of the semi-infinite bandgaps and the first bandgap. In the semi-infinite bandgap, low-power defect solitons are stable when the negative defect depth is low and unstable when the negative defect depth is high, moderate-power defect solitons are stable when the negative defect depth is high, and high-power defect solitons are unstable for all the negative defect depths. In the first bandgap, defect solitons are stable in all the power regions when the negative defect depth is low. When the negative defect depth is high, defect solitons are stable in the high power region and unstable in the low power region. On the other hand, these defect solitons are those studied previously in kagome photonic lattices with a defect in biased non-photovoltaic-photorefractive crystals when the bulk photovoltaic effect is negligible and those in kagome photonic lattices with a defect in photovoltaic-photorefractive crystals when the external bias field is absent.

Słowa kluczowe

EN

defect solitons; photonic lattices; photorefractive nonlinearity; nonlinear optics

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2018
• Tom: Vol. 48, nr 3
• Strony: 349--359
• Opis fizyczny: Bibliogr. 31 poz., rys.

Twórcy

autor

Hui J.

• Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, Tianjin Polytechnic University, Tianjin 300387, China
• School of Electronics and Information Engineering, Tianjin Polytechnic University, Tianjin 300387, China

autor

Lu K.

• Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, Tianjin Polytechnic University, Tianjin 300387, China
• School of Electronics and Information Engineering, Tianjin Polytechnic University, Tianjin 300387, China

autor

Zhao C.

• Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, Tianjin Polytechnic University, Tianjin 300387, China
• School of Electronics and Information Engineering, Tianjin Polytechnic University, Tianjin 300387, China

autor

Gao L.

• Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, Tianjin Polytechnic University, Tianjin 300387, China
• School of Electronics and Information Engineering, Tianjin Polytechnic University, Tianjin 300387, China

autor

Chen W.

• Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, Tianjin Polytechnic University, Tianjin 300387, China
• School of Electronics and Information Engineering, Tianjin Polytechnic University, Tianjin 300387, China

Bibliografia

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Uwagi

PL

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).