Nanostructures with Ge–Si quantum dots for infrared photodetectors

• Autorzy: Izhnin I. I. , Fitsych O. I. , Voitsekhovskii A. V. , Kokhanenko A. P. , Lozovoy K. A. , Dirko V. V.

Identyfikatory

DOI

10.1016/j.opelre.2018.06.002

• Języki publikacji: EN

Abstrakty

EN

In this paper questions of optimization of growth conditions in the method of molecular beam epitaxy for creation of high-efficient quantum dot infrared photodetectors are considered. As a model material system for theoretical investigations, heterostructures with germanium-silicon quantum dots on the silicon surface are chosen. For calculations of the dependencies of quantum dots array parameters on synthesis conditions the kinetic model of growth of differently shaped quantum dots based on the general nucleation theory is proposed. The theory is improved by taking into account the change in free energy of nucleation of an island due to the formation of additional edges of islands and due to the dependence of surface energies of facets of quantum dots on the thickness of a 2D wetting layer during the Stranski–Krastanow growth. Calculations of noise and signal characteristics of infrared photodetectors based on heterostructures with quantum dots of germanium on silicon are done. Dark current in such structures caused by thermal emission and barrier tunneling of carriers, as well as detectivity of the photodetector in the approximation of limitation by generation-recombination noises are estimated. Moreover, the presence of dispersion of quantum dots by size is taken into account in the calculations of the generation-recombination noises. Results of calculations of the properties of structures with quantum dots and their dependencies on growth parameters, as well as the characteristics of quantum dot photodetectors are presented. Comparison of the estimated parameters of quantum dots ensembles and the characteristics of quantum dot photodetectors with experimental data is carried out.

Słowa kluczowe

EN

molecular beam epitaxy; heterostructures; dark current; noise; detectivity

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2018
• Tom: Vol. 26, No. 3
• Strony: 195--200
• Opis fizyczny: Bibliogr. 53 poz., wykr.

Twórcy

autor

Izhnin I. I.

• Scientific Research Company “Carat”, Stryjska St. 202, Lviv 79031, Ukraine

autor

Fitsych O. I.

• Scientific Research Company “Carat”, Stryjska St. 202, Lviv 79031, Ukraine

autor

Voitsekhovskii A. V.

• National Research Tomsk State University, Lenin Av. 36, Tomsk 634050, Russia

autor

Kokhanenko A. P.

• National Research Tomsk State University, Lenin Av. 36, Tomsk 634050, Russia

autor

Lozovoy K. A.

• National Research Tomsk State University, Lenin Av. 36, Tomsk 634050, Russia

autor

Dirko V. V.

• National Research Tomsk State University, Lenin Av. 36, Tomsk 634050, Russia

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Uwagi

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).