Chemical evaluation of the quality of nanostructures synthesized on the surface of indium phosphide

• Autorzy: Kovachov S. S. , Bogdanov I. T. , Pimenov D. O. , Bondarenko V. V. , Konovalenko A. A. , Skurska M. M. , Konovalenko I. S. , Suchikova Y. O.

Identyfikatory

DOI

10.5604/01.3001.0015.3592

• Języki publikacji: EN

Abstrakty

EN

Purpose: The article proposes a methodology for determining the chemical quality criterion of porous layers synthesized on the surface of semiconductors, based on taking into account the chemical parameters of the surface that can affect the properties of nanostructures. Design/methodology/approach: The chemical quality criterion was evaluated in terms of stoichiometry, stability of structures over time, uniformity of distribution over the surface, and the presence of an oxide phase. As an example, a calculation is demonstrated for the por-InP/InP structure synthesized on a mono-InP surface. The results of calculating the chemical quality criterion were evaluated using the Harrington scale to rank samples by quality level. Findings: A chemical criterion for the quality of porous layers synthesized on the surface of semiconductors has been developed. This criterion contains a set of indicators sufficient for a comprehensive assessment of the surface condition and is universal in nature. The studies carried out make it possible to reasonably approach the determination of the modes of electrochemical processing of semiconductors and open up new perspectives in the construction of a model of self-organization of a porous structure. Research limitations/implications: The chemical quality criterion does not allow evaluating the obtained nanostructures in terms of geometric parameters. Therefore, in the future, there is a need to develop a morphological quality criterion and determine a methodology for assessing a generalized quality criterion for nanostructures synthesized on the surface of semiconductors, which may include economic, environmental, technological indicators, and the like. Practical implications: Study results are expedient from a practical point of view, since they make it possible to reasonably approach the determination of the modes of electrochemical processing of semiconductors, synthesize nanostructures with predetermined properties, and create standard samples of nanomaterial composition. Originality/value: Methodology for assessing the quality of porous semiconductors by a chemical criterion has been applied for the first time in engineering science. The article will be useful to engineers, who are engaged in the synthesis of nanostructures, researchers and scientists, as well as specialists in nanometrology.

Słowa kluczowe

EN

semiconductors; nanostructures; chemical criterion; indium phosphide; quality indicators

PL

półprzewodniki; nanostruktury; kryterium chemiczne; fosforek indu; wskaźniki jakości

• Wydawca: International OCSCO World Press
• Czasopismo: Archives of Materials Science and Engineering
• Rocznik: 2021
• Tom: Vol. 110, nr 1
• Strony: 18--26
• Opis fizyczny: Bibliogr. 47 poz.

Twórcy

autor

Kovachov S. S.

• Department of Physics, Berdyansk State Pedagogical University, 71100, Berdyansk, Shmidt str., 4, Ukraine

autor

Bogdanov I. T.

• Berdyansk State Pedagogical University, 71100, Berdyansk, Shmidt str., 4, Ukraine

autor

Pimenov D. O.

• Department of Physics, Berdyansk State Pedagogical University, 71100, Berdyansk, Shmidt str., 4, Ukraine

autor

Bondarenko V. V.

• Department of Physics, Berdyansk State Pedagogical University, 71100, Berdyansk, Shmidt str., 4, Ukraine

autor

Konovalenko A. A.

• Benemérita Universidad Autónoma de Puebla, 4 Sur 104 Centro Histórico C.P. 72000 Puebla, Mexico

autor

Skurska M. M.

• Department of Physics, Berdyansk State Pedagogical University, 71100, Berdyansk, Shmidt str., 4, Ukraine

autor

Konovalenko I. S.

• Department of Physics, Berdyansk State Pedagogical University, 71100, Berdyansk, Shmidt str., 4, Ukraine

autor

Suchikova Y. O.

• Department of Physics, Berdyansk State Pedagogical University, 71100, Berdyansk, Shmidt str., 4, Ukraine

• https://orcid.org/0000-0003-4537-966X

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