Właściwości i zastosowania tranzystorów HEMT na bazie azotku galu

Janke, W.; Wojtasiak, W.

Artykuł - szczegóły

Tytuł artykułu

Właściwości i zastosowania tranzystorów HEMT na bazie azotku galu

Autorzy

Janke W. , Wojtasiak W.

Wybrane pełne teksty z tego czasopisma

http://pe.org.pl/

Identyfikatory

Warianty tytułu

The basic properties and applications of GaN HEMT transistors

Języki publikacji

Abstrakty

Omówiono podstawowe właściwości i zastosowania tranzystorów HEMT wykonywanych na bazie azotku galu (GaN). Przedyskutowano specyfikę struktury heterozłączowej oraz główne cechy fizyczne azotku galu. Szczególną uwagę poświęcono mechanizmowi tworzenia dwuwymiarowego gazu elektronowego (2DEG) i jego znaczeniu dla właściwości tranzystorów. Przedstawiono niektóre efekty pasożytnicze występujące w tranzystorach GaN HEMT, znane jako „current collapse” oraz „DC-RF dispersion”. Omówiono także najważniejsze obecnie zastosowania tranzystorów GaN HEMT – w układach mikrofalowych oraz energoelektronice.

The basic properties and applications of GaN HEMT transistors are reviewed. Fundamentals feature of gallium nitride (GaN) and specific properties of heterojunction are discussed with the special attention paid to the mechanism of two-dimensional electron gas (2DEG) formation, and resulting high mobility feature. The parasitic effects known as current collapse and DC-RF dispersion in GaN HEMT are discussed. The most important applications in microwave circuits and power electronics are described.

Słowa kluczowe

azotek galu GaN HEMT układ mikrofalowy energoelektronika

gallium nitride GaN HEMT microwave circuits power electronics

Wydawca

Wydawnictwo SIGMA-NOT

Czasopismo

Przegląd Elektrotechniczny

Rocznik

2015

Tom

R. 91, nr 9

Strony

65--73

Opis fizyczny

Bibliogr. 87 poz., rys., tab.

Twórcy

autor

Janke W.

Wlodzimierz.Janke@tu.koszalin.pl

Politechnika Koszalińska, Wydział Elektroniki i Informatyki, ul. Śniadeckich 2, 75-453 Koszalin

autor

Wojtasiak W.

wwojtas@ire.pw.edu.pl

Politechnika Warszawska, Instytut Radioelektroniki, ul. Nowowiejska 15/19, 00-665 Warszawa

Bibliografia

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