High pressure Raman study of layered semiconductor TlGaSe2

Jabarov, S. H.; Aliyeva, V. B.; Mammadov, T. G.; Mammadov, A. I.; Kichanov, S. E.; Dubrovinsky, L. S.; Babayev, S. S.; Pashayeva, E. G.; Dang, N. T.

doi:10.1515/msp-2018-0040

Artykuł - szczegóły

Tytuł artykułu

High pressure Raman study of layered semiconductor TlGaSe2

Autorzy

Jabarov S. H. , Aliyeva V. B. , Mammadov T. G. , Mammadov A. I. , Kichanov S. E. , Dubrovinsky L. S. , Babayev S. S. , Pashayeva E. G. , Dang N. T.

Wybrane pełne teksty z tego czasopisma

Identyfikatory

DOI

10.1515/msp-2018-0040

Warianty tytułu

Języki publikacji

Abstrakty

Raman spectroscopy measurements of a monoclinic layered semiconductor TlGaSe₂ were performed in a pressure range up to 10.24 GPa. The pressure-induced first-order phase transition accompanied by reconstruction of the layer structure was observed at the pressure P ~ 0.9 GPa. The mode-Grüneisen parameters of intralayer bonds were calculated for TlGaSe₂. The contribution of thermal expansion to temperature changes of phonon frequencies was defined. The type of intralayer bonds and their pressure transformation were analyzed in layered TlGaSe₂. It was shown that the nature of intramolecular forces in molecular crystals and intralayer forces in layered GaS, GaSe and TlGaSe₂ is similar.

Słowa kluczowe

layered semiconductor high pressure Raman study

Wydawca

De Gruyter

Czasopismo

Materials Science Poland

Rocznik

2018

Tom

Vol. 36, No. 2

Strony

203--208

Opis fizyczny

Bibliogr. 39 poz., rys., tab.

Twórcy

autor

Jabarov S. H.

sakin@jinr.ru

Institute of Physics, ANAS, AZ-1143, Baku, Azerbaijan
Joint Institute for Nuclear Research, 141980, Dubna, Russia

autor

Aliyeva V. B.

Institute of Physics, ANAS, AZ-1143, Baku, Azerbaijan

autor

Mammadov T. G.

Institute of Physics, ANAS, AZ-1143, Baku, Azerbaijan

autor

Mammadov A. I.

Institute of Physics, ANAS, AZ-1143, Baku, Azerbaijan

autor

Kichanov S. E.

Joint Institute for Nuclear Research, 141980, Dubna, Russia

autor

Dubrovinsky L. S.

Bayerisches Geoinstitut, University Bayreuth, D-95440, Bayreuth, Germany

autor

Babayev S. S.

Institute of Physics, ANAS, AZ-1143, Baku, Azerbaijan

autor

Pashayeva E. G.

Institute of Physics, ANAS, AZ-1143, Baku, Azerbaijan

autor

Dang N. T.

Institute of Research and Development, Duy Tan University, 550000, Da Nang, Vietnam

Bibliografia

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Uwagi

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).

Typ dokumentu

Bibliografia

Identyfikator YADDA

bwmeta1.element.baztech-e4da8da9-e6d8-45fd-8052-975f121c1d76