PL EN


Preferencje help
Widoczny [Schowaj] Abstrakt
Liczba wyników
Powiadomienia systemowe
  • Sesja wygasła!
Tytuł artykułu

A study of nickel and cobalt silicides formed in the Ni/Co/Si(1 0 0) system by thermal annealing

Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
In this work, the Ni/Co/Si system was annealed at temperatures ranging from 300 °C to 800 °C. The samples were characterized by means of X-ray diffraction (XRD), Raman spectroscopy, Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) and sheet resistance measurement. The XRD and Raman spectroscopy results showed that the formation of nickel and cobalt silicides (CoSi, Co2Si, Ni2Si, NiSi, NiSi2, CoSi2) is an annealing temperature dependent diffusion process. The diffusion phenomenon was evidenced by RBS. The low values of the sheet resistance which were correlated with the films surface roughness were attributed to the formation of both CoSi and NiSi phases.
Wydawca
Rocznik
Strony
394--399
Opis fizyczny
Bibliogr. 27 poz., rys.
Twórcy
autor
  • Ecole Nationale Polytechnique de Constantine - Malek BENNABI- Constantine, Algeria
  • Laboratoire Couches Minces et Interfaces, Université Frères mentouri Constantine, Route Ain El Bey, Constantine, Algeria
autor
  • Laboratory of Research on the Physic-Chemical of Surfaces and Interfaces, Université 20 août 1955-Skikda, Route d’El Hadaiek, 21000 Skikda, Algeria
autor
  • Laboratoire Couches Minces et Interfaces, Université Frères mentouri Constantine, Route Ain El Bey, Constantine, Algeria
autor
  • Laboratory for the Elaboration of New Materials and their Characteristics, Université de Sétif, Sétif 19000, Algeria
autor
  • Laboratoire Couches Minces et Interfaces, Université Frères mentouri Constantine, Route Ain El Bey, Constantine, Algeria
autor
  • Laboratoire Couches Minces et Interfaces, Université Frères mentouri Constantine, Route Ain El Bey, Constantine, Algeria
autor
  • Nuclear Research Center of Algiers, 16000, Algeria
Bibliografia
  • [1] FURUKAWA S., ISHIWARA H., J. Appl. Phys., 1 (1983), 21.
  • [2] MURARKA S P., J. Vaccum Sci. Technol. B, 4 (1986), 1325.
  • [3] KIM S.J., NICOLET M. A., Private communication (1988).
  • [4] LAUWERS A., LARSEN K.K., VAN HOVE M., VERBEECK R., K. MAEX., J. Appl. Phys., 77 (1995), 2525.
  • [5] GEWINER G., PIRRI C., PERUCHETTI J.C., BULMONT D., DERRIEN J., THIRTY P., Phys. Rev. B, 38 (1988), 1879.
  • [6] XU D.X., DAS S.R., MCCAFFREY J.P., PETERS C.J., ERICKSON L.E., Mater. Res. Soc. Symp. Proc., 59 (1996), 402.
  • [7] MOUROUX A., ZHANG S.L., KAPLAN W., NYGREN S., ÖSTLING M., PETERSSON C.S., Mat. Soc. Symp. Proc., 511 (1996), 427.
  • [8] LUTZE J., SCOTT G., MANLEY M., IEEE Electron. Dev. Lett., 21 (4) (2000), 155.
  • [9] FANG H., OZTURK M.C., SEEBAUER E.G., BATCHELOR D.E., J. Electrochem. Soc., 146 (11) (1999), 4240.
  • [10] CHEN J., COLINGE J.P., FLANDRE D., GILLON R., RASKIN J.P., VANHOENACKER D., J. Electrochem. Soc., 177 (7) (1997), 2437.
  • [11] TUNG R.T., Appl. Surf. Sci., 268 (1997), 117.
  • [12] ZHANG H., POOLE J., ELLER R., KEEFE M., J. Vac. Sci. Technol., A, 17 (4) (1999), 1904.
  • [13] DAS M.L.A., FRASER D.B., WEI C.S., Appl. Phys. Lett., 58 (12) (1991), 1308.
  • [14] ZHAO F.F., ZHENG J.Z., SHEN Z.X., OSIPOWICZ T., GAO W.Z., CHAN L.H., Microelectron. Eng., 71 (1) (2004), 104.
  • [15] MAA J.S., ONO Y., TWEET D.J., ZHANG F., HSU S.T., J. Vac. Sci. Technol. A, 19 (4) (2001), 1595.
  • [16] MANGELINCK D., GAS P., GAY J.M., PICHAUD B., THOMAS O., J. Appl. Phys., 84 (5) (1998), 2583.
  • [17] SEDRATI C., BOUABELLOU A., DERAFA A., BOUDISSA M., BENAZZOUZ C., HAMMOUDI A., Vacuum, 4 (2015), 117.
  • [18] DOOLITTLE L.R., Nucl. Instrum. Met. B, 4 (1985), 344.
  • [19] MANGELINCK D., Priv. Commun., (1995), 12.
  • [20] ZHOU X., SHIHUA H., Microelectron. Eng., 87 (2010), 1828.
  • [21] ZHAO J., BALLAST L.K., HOSSAIN T.Z., TROSTEL R.E., BRIDGMAN W.C., J. Vac. Sci. Technol. A, 18 (2000), 1690.
  • [22] LIU F.M., YE J.H., REN B., YANG Z.L., LIAO Y.Y., SEE A., CHAN L., TIAN Z.Q., Thin Solid Films, 471 (2005), 257.
  • [23] CICHOŃ S., MACHÁČ P., BARDA B., MACHOVIČ V., SLEPIČKA P., Thin Solid Films, 520 (2012), 4378.
  • [24] WIEMER C., TALLARIDA G., BONERA E., RICCI E., FANCIULLI M., MASTRACCHIO G.F., PAVIA G., MARANGON S., Microelectron. Eng., 70 (2003), 233.
  • [25] PEREZ-RODRIGUEZ A., ROCA E., JAWHARI T., MORANTE J.R., SCHREUTELKAMP R.J., Thin Solid Films, 45 (1994), 251.
  • [26] HUANG W., MIN Y.L., RU G.P., JIANG Y.L., QU X.P., LIB.Z., Appl. Surf. Sci., 254 (2008), 2120.
  • [27] TIMOSHEVSKII V., KE Y., GUO H., GALL D., J. Appl. Phys., 103 (2008), 113705.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-e328ce4a-b74c-4edc-a99d-eea436bbaf31
JavaScript jest wyłączony w Twojej przeglądarce internetowej. Włącz go, a następnie odśwież stronę, aby móc w pełni z niej korzystać.