A study of nickel and cobalt silicides formed in the Ni/Co/Si(1 0 0) system by thermal annealing

• Autorzy: Sedrati C. , Bouabellou A. , Kabir A. , Haddad R. , Boudissa M. , Taabouche A. , Fiad H. , Hammoudi A.

Identyfikatory

DOI

10.2478/msp-2020-0057

• Języki publikacji: EN

Abstrakty

EN

In this work, the Ni/Co/Si system was annealed at temperatures ranging from 300 °C to 800 °C. The samples were characterized by means of X-ray diffraction (XRD), Raman spectroscopy, Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) and sheet resistance measurement. The XRD and Raman spectroscopy results showed that the formation of nickel and cobalt silicides (CoSi, Co₂Si, Ni₂Si, NiSi, NiSi₂, CoSi₂) is an annealing temperature dependent diffusion process. The diffusion phenomenon was evidenced by RBS. The low values of the sheet resistance which were correlated with the films surface roughness were attributed to the formation of both CoSi and NiSi phases.

Słowa kluczowe

EN

Ni/Co/Si system; nickel silicide; cobalt silicide; XRD; X-ray diffraction; RBS; Rutherford backscattering spectroscopy; Raman spectroscopy; AFM; atomic force microscopy

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2020
• Tom: Vol. 38, No. 3
• Strony: 394--399
• Opis fizyczny: Bibliogr. 27 poz., rys.

Twórcy

autor

Sedrati C.

• Ecole Nationale Polytechnique de Constantine - Malek BENNABI- Constantine, Algeria

autor

Bouabellou A.

• Laboratoire Couches Minces et Interfaces, Université Frères mentouri Constantine, Route Ain El Bey, Constantine, Algeria

autor

Kabir A.

• Laboratory of Research on the Physic-Chemical of Surfaces and Interfaces, Université 20 août 1955-Skikda, Route d’El Hadaiek, 21000 Skikda, Algeria

autor

Haddad R.

• Laboratoire Couches Minces et Interfaces, Université Frères mentouri Constantine, Route Ain El Bey, Constantine, Algeria

autor

Boudissa M.

• Laboratory for the Elaboration of New Materials and their Characteristics, Université de Sétif, Sétif 19000, Algeria

autor

Taabouche A.

• Laboratoire Couches Minces et Interfaces, Université Frères mentouri Constantine, Route Ain El Bey, Constantine, Algeria

autor

Fiad H.

• Laboratoire Couches Minces et Interfaces, Université Frères mentouri Constantine, Route Ain El Bey, Constantine, Algeria

autor

Hammoudi A.

• Nuclear Research Center of Algiers, 16000, Algeria

Bibliografia

• [1] FURUKAWA S., ISHIWARA H., J. Appl. Phys., 1 (1983), 21.
• [2] MURARKA S P., J. Vaccum Sci. Technol. B, 4 (1986), 1325.
• [3] KIM S.J., NICOLET M. A., Private communication (1988).
• [4] LAUWERS A., LARSEN K.K., VAN HOVE M., VERBEECK R., K. MAEX., J. Appl. Phys., 77 (1995), 2525.
• [5] GEWINER G., PIRRI C., PERUCHETTI J.C., BULMONT D., DERRIEN J., THIRTY P., Phys. Rev. B, 38 (1988), 1879.
• [6] XU D.X., DAS S.R., MCCAFFREY J.P., PETERS C.J., ERICKSON L.E., Mater. Res. Soc. Symp. Proc., 59 (1996), 402.
• [7] MOUROUX A., ZHANG S.L., KAPLAN W., NYGREN S., ÖSTLING M., PETERSSON C.S., Mat. Soc. Symp. Proc., 511 (1996), 427.
• [8] LUTZE J., SCOTT G., MANLEY M., IEEE Electron. Dev. Lett., 21 (4) (2000), 155.
• [9] FANG H., OZTURK M.C., SEEBAUER E.G., BATCHELOR D.E., J. Electrochem. Soc., 146 (11) (1999), 4240.
• [10] CHEN J., COLINGE J.P., FLANDRE D., GILLON R., RASKIN J.P., VANHOENACKER D., J. Electrochem. Soc., 177 (7) (1997), 2437.
• [11] TUNG R.T., Appl. Surf. Sci., 268 (1997), 117.
• [12] ZHANG H., POOLE J., ELLER R., KEEFE M., J. Vac. Sci. Technol., A, 17 (4) (1999), 1904.
• [13] DAS M.L.A., FRASER D.B., WEI C.S., Appl. Phys. Lett., 58 (12) (1991), 1308.
• [14] ZHAO F.F., ZHENG J.Z., SHEN Z.X., OSIPOWICZ T., GAO W.Z., CHAN L.H., Microelectron. Eng., 71 (1) (2004), 104.
• [15] MAA J.S., ONO Y., TWEET D.J., ZHANG F., HSU S.T., J. Vac. Sci. Technol. A, 19 (4) (2001), 1595.
• [16] MANGELINCK D., GAS P., GAY J.M., PICHAUD B., THOMAS O., J. Appl. Phys., 84 (5) (1998), 2583.
• [17] SEDRATI C., BOUABELLOU A., DERAFA A., BOUDISSA M., BENAZZOUZ C., HAMMOUDI A., Vacuum, 4 (2015), 117.
• [18] DOOLITTLE L.R., Nucl. Instrum. Met. B, 4 (1985), 344.
• [19] MANGELINCK D., Priv. Commun., (1995), 12.
• [20] ZHOU X., SHIHUA H., Microelectron. Eng., 87 (2010), 1828.
• [21] ZHAO J., BALLAST L.K., HOSSAIN T.Z., TROSTEL R.E., BRIDGMAN W.C., J. Vac. Sci. Technol. A, 18 (2000), 1690.
• [22] LIU F.M., YE J.H., REN B., YANG Z.L., LIAO Y.Y., SEE A., CHAN L., TIAN Z.Q., Thin Solid Films, 471 (2005), 257.
• [23] CICHOŃ S., MACHÁČ P., BARDA B., MACHOVIČ V., SLEPIČKA P., Thin Solid Films, 520 (2012), 4378.
• [24] WIEMER C., TALLARIDA G., BONERA E., RICCI E., FANCIULLI M., MASTRACCHIO G.F., PAVIA G., MARANGON S., Microelectron. Eng., 70 (2003), 233.
• [25] PEREZ-RODRIGUEZ A., ROCA E., JAWHARI T., MORANTE J.R., SCHREUTELKAMP R.J., Thin Solid Films, 45 (1994), 251.
• [26] HUANG W., MIN Y.L., RU G.P., JIANG Y.L., QU X.P., LIB.Z., Appl. Surf. Sci., 254 (2008), 2120.
• [27] TIMOSHEVSKII V., KE Y., GUO H., GALL D., J. Appl. Phys., 103 (2008), 113705.