The operation of THz quantum cascade laser in the region of negative differential resistance

• Autorzy: Khabibullin R. A. , Shchavruk N. V. , Ponomarev D. S. , Ushakov D. V. , Afonenko A. A. , Maremyanin K. V. , Volkov O. Y. , Pavlovskiy V. V. , Dubinov A. A.

Identyfikatory

DOI

10.1016/j.opelre.2019.11.002

• Języki publikacji: EN

Abstrakty

EN

We investigate the light-current-voltage characteristics and emission spectra of 2.3THz quantum cascade laser operating in the negative differential resistance (NDR) region. It was shown that the formation of electric field domains (EFDs) leads to a large number of discontinuities on the current-voltage and the total optical power on current characteristics. Measurements of emission spectra at different current (before the NDR region and in the NDR region) shows that the formation of EFDs results in decrease of the output intensity, but does not influence on lasing frequencies. The performed calculations qualitatively explain the experimental results.

Słowa kluczowe

EN

quantum-cascade laser; THz region; resonant-phonon design; negative differential resistivity

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2019
• Tom: Vol. 27, No. 4
• Strony: 329--333
• Opis fizyczny: Bibliogr. 16 poz., wykr.

Twórcy

autor

Khabibullin R. A.

• V.G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow, Russia
• Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia

autor

Shchavruk N. V.

• V.G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow, Russia

autor

Ponomarev D. S.

• V.G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow, Russia
• Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia

autor

Ushakov D. V.

• Belarusian State University, Minsk, Belarus

autor

Afonenko A. A.

• Belarusian State University, Minsk, Belarus

autor

Maremyanin K. V.

• Institute for Physics of Microstructures of RAS, Nizhny Novgorod, Russia

autor

Volkov O. Y.

• Institute of Radio-Engineering and Electronics of RAS, Moscow, Russia

autor

Pavlovskiy V. V.

• Institute of Radio-Engineering and Electronics of RAS, Moscow, Russia

autor

Dubinov A. A.

• Institute for Physics of Microstructures of RAS, Nizhny Novgorod, Russia

Bibliografia

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Uwagi

1. Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).

2. This study was supported by the Russian Foundation for Basic Research, project no. 18-52-00011 Bel_a, and the Belarussian Republican Foundation for Basic Research, project no. F18R-107. The fabrication of THz QCLs was supported by the Russian Science Foundation, grant no. 18-19-00493.