Influence of hydrogen volumetric flow rate on temperature distribution in CVD reactor based on epi-growth of SiC

• Autorzy: Skibinski J. , Wejrzanowski T. , Teklinska D. , Kurzydlowski K. J.
• Języki publikacji: EN

Abstrakty

EN

In the present paper the quantitative relationship between the heat and mass transfer in the Aixtron VP508 hot wall CVD reactor and the epitaxial growth of silicon carbide is determined. The aim of this study was to estimate optimal process conditions for obtaining monocrystalline silicon carbide epi-layers with the most homogenous thickness. Since there are many parameters influencing reactions on the crystal area, such as temperature, pressure, gas flow and reactor geometry, it is difficult to design an optimal process. Detailed 3D modeling was used to gain insight into the process conditions, as it is problematic to experimentally determine the exact distribution of heat and mass transfer inside the reactor during epitaxial growth. Numerical simulations allow one to understand the process by calculating the heat and mass transfer distribution during the epitaxial growth of silicon carbide. The present approach was applied to enhance the performance of the Aixtron VP508 reactor.

Słowa kluczowe

EN

Finite Volume Method; epitaxial growth; chemical vapor deposition; CVD; silicon carbide

PL

metoda objętości skończonych; wzrost epitaksjalny; chemiczne osadzanie z fazy gazowej; węglik krzemu

• Wydawca: Institute of Heat Engineering, Warsaw University of Technology
• Czasopismo: Journal of Power Technologies
• Rocznik: 2015
• Tom: Vol. 95, nr 2
• Strony: 119--125
• Opis fizyczny: Bibliogr. 15 poz., rys., tab., wykr.

Twórcy

autor

Skibinski J.

• Faculty of Materials Science Engineering, Warsaw University of Technology, Poland

autor

Wejrzanowski T.

• Faculty of Materials Science Engineering, Warsaw University of Technology, Poland

autor

Teklinska D.

• Institute of Electronic Materials Technology, Warsaw, Poland

autor

Kurzydlowski K. J.

• Faculty of Materials Science Engineering, Warsaw University of Technology, Poland

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