Effect of annealing temperature on the optical properties of ZnO nanoparticles

• Autorzy: Ismail R. A. , Habubi N. F. , Abid H. R.
• Języki publikacji: EN

Abstrakty

EN

In this work, ZnO films were prepared by drop casting technique. The films were deposited on quartz substrates under different annealing time (15,30,45 and 60 min.) at a constant temperature (800 °C). The optical properties were achieved by measuring the absorbance and transmittance spectra in the wavelength range (200-900) nm. It was found that the absorbance decreases while transmission increases as the annealing time increases, while the reflectance decreases as the annealing time increases. The optical measurements indicate the kind of transition which was a direct allowed with an average band gap energies lie between 3.3 eV and 3.54 eV with the change of annealing time.

Słowa kluczowe

EN

nanoparticles; ZnO film; optical properties; drop casting technique

• Wydawca: Przedsiębiorstwo Wydawnictw Naukowych "DARWIN"
• Czasopismo: International Letters of Chemistry, Physics and Astronomy
• Rocznik: 2014
• Tom: Vol. 4
• Strony: 37--47
• Opis fizyczny: Bibliogr. 26 poz., rys.

Twórcy

autor

Ismail R. A.

• School of Applied Sciences, University of Technology, Baghdad, Iraq

autor

Habubi N. F.

• Department of Physics, College of Education, University of Al-Mustansiriyah, Baghdad, Iraq

autor

Abid H. R.

• Department of Physics, College of Education, University of Al-Mustansiriyah, Baghdad, Iraq

Bibliografia

• [1] Zhong Lin Wang, Journal of Physics: Condensed Matter. 16 (2004) 829.
• [2] Zhiyong Fan, Jia G. Lu, Journal of Nanoscience and Nanotechnology 5(10) (2005) 1561.
• [3] S. Baruah, J. Dutta, Hydrothermal growth of ZnO nanostructures, Sci. Technol. Adv. Mater. 10(1) (2009).
• [4] Dapeng Wu, Zhengyu Bai, Kai Jiang, Materials Letters 63 (2009) 1057.
• [5] Chen Z., Z. Shan, S. Li, C. B. Liang, S. X. Mao, J. Cryst. Growth. 265 (2004) 482.
• [6] Sekar A., S. H. Kim, A. Umar, Y. B. Hahn, J. Cryst. Growth. 277 (2005) 471.
• [7] B. P. Zhang, N. T. Binh, Y. Segawa, Y. Kashiwaba, K. Haga, Appl. Phys. Lett. 84 (2004) 586.
• [8] Y. C. Kong, D. P. Yu, B. Zhang, W. Fang, S.Q. Feng, Appl. Phys. Lett. 78 (2001) 407.
• [9] Y. J. Xing, et al., Appl. Phys. Lett. 83 (2003) 1689.
• [10] W. I. Park, G.-C. Yi, M. Y. Kim, S. J. Pennycook, Adv. Mater. 15 (2003) 526.
• [11] L. Guo, S. Yang, C. Yang, P. Yu, Appl. Phys. Lett. 76 (2000) 2901.
• [12] K. Haga, F. Katahira, H. Watanabe, Thin Solid Films 343 (1999) 145.
• [13] K. Ogata, T. Kawanishi, K. Maejimaz, K. Sakurai, S. Fujita, Jpn. J. Appl. Phys. 7A (2001) 240.
• [14] S. A. Studenikin, N. Golego, M. Cocivera, J. Appl. Phys. 84 (1998) 2287.
• [15] W. Li, et al., Surf. Coat.Technol. 346 (2000) 128.
• [16] Y. Sun, G. M. Fuge, M. N. R. Ashfold, Chem. Phys. Lett. 396 (2004) 21.
• [17] W. Chiou,W.Wu, J. Ting, Diamond Relat. Mater. 12 (2003) 1841.
• [18] Y. Li, G. W. Meng, L. D. Zhang, Appl. Phys. Lett. 76 (2000) 2011.
• [19] S. Y. Li, C. Y. Lee, T. Y. Tseng, J. Cryst. Growth 247 (2003) 357.
• [20] Al Asmar R., Zaouk D., Bahouth Ph., Podleki J., Foucaran A., Microelectronic Engineering 83 (2006) 393e8.
• [21] C. Klingshirn "Semiconductor optics" Second Edition, new York (2005).
• [22] Caglar M., Ilican S., Caglar Y., Yakuphanoglu F., Applied Surface Science 255 (2009) 4491e6.
• [23] C. F. Klingshirn, Semiconductor Optics, Springer Verlag Berlin (1997).
• [24] Nadir Fadhil Habubi, Sami Salmann Chiad, Saad Farhan Oboudi, Ziad Abdulahad Toma, International Letters of Chemistry, Physics and Astronomy 4 (2013) 1-8.
• [25] Saad F. Oboudi, Nadir F. Habubi, Ghuson H. Mohamed, Sami S. Chiad, International Letters of Chemistry, Physics and Astronomy 8(1) (2013) 78-86.
• [26] J. A. Najim, J. M. Rozaiq, International Letters of Chemistry, Physics and Astronomy 10(2) (2013) 137-150.