SiN/SiO2 passivation stack of n-type silicon surface

• Autorzy: El Amrani A. , Si-Kaddour R. , Maoudj M. , Nasraoui C.

Identyfikatory

DOI

10.2478/msp-2019-0065

• Języki publikacji: EN

Abstrakty

EN

The SiN/SiO₂ stack is widely used to passivate the surface of n-type monocrystalline silicon solar cells. In this work, we have undertaken a study to compare the stack layer obtained with SiO₂ grown by both rapid thermal and chemical ways to passivate n-type monocrystalline silicon surface. By varying the plateau time and the plateau temperature of the rapid thermal oxidation, we determined the parameters to grow 10 nm thick oxide. Two-step nitric acid oxidation was used to grow 2 nm thick silicon oxide. Silicon nitride films with three refractive indices were used to produce the SiN/SiO₂ stack. Regarding this parameter, the minority carrier lifetime measured by means of QSSPC revealed that the refractive index of 1.9 ensured the best passivation quality of silicon wafer surface. We also found that stacks with nitric acid oxidation showed definitely the best passivation quality. In addition to produce the most efficient passivation, this technique has the lowest thermal budget.

Słowa kluczowe

EN

silicon; passivation; silicon nitride; oxide

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2019
• Tom: Vol. 37, No. 3
• Strony: 482--487
• Opis fizyczny: Bibliogr. 22 poz., tab., rys.

Twórcy

autor

El Amrani A.

• Research Center in Semiconductor Technology for Energetic, 02 Bd. Frantz Fanon-Alger, BP N°140, Les 07 Merveilles, 16038, Algiers, Algeria

autor

Si-Kaddour R.

• Research Center in Semiconductor Technology for Energetic, 02 Bd. Frantz Fanon-Alger, BP N°140, Les 07 Merveilles, 16038, Algiers, Algeria

autor

Maoudj M.

• Research Center in Semiconductor Technology for Energetic, 02 Bd. Frantz Fanon-Alger, BP N°140, Les 07 Merveilles, 16038, Algiers, Algeria

autor

Nasraoui C.

• Research Center in Semiconductor Technology for Energetic, 02 Bd. Frantz Fanon-Alger, BP N°140, Les 07 Merveilles, 16038, Algiers, Algeria

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