Morphology and Structure of the Erbium Stabilized Bismuth Oxide Thin Films Deposited by PLD Technique

• Autorzy: Kąc S. , Szwachta G. , Cieniek Ł. , Moskalewicz T.

Identyfikatory

DOI

10.24425/amm.2019.129482

• Języki publikacji: EN

Abstrakty

EN

The aim of the work was to obtain thin bismuth oxide films containing, at room temperature, the Bi_1,5Er_0,5O₃ phase. This phase corresponds to the structure of the high-temperature δ-Bi₂O₃ phase, in pure bismuth oxide, characterized by the highest ionic conductivity of all known solid state ionic conductors. The high-temperature δ-Bi₂O₃ phase with the face centered cubic structure, in pure bismuth oxide, occurs only at temperature above 730°C. Stabilization of the δ-Bi₂O₃ phase at room temperature was achieved by an addition of the erbium together with the employ-ment of the Pulsed Laser Deposition (PLD) technique. The influence of an amount of Er alloying and the film thickness on surface morphology, microstructure, phase composition of thin films were investigated. The velocity of deposition of thin layers of bismuth stabilized with erbium in the PLD process using the Nd: YAG laser was about 0.5 nm/s.The investigation results of erbium doped bismuth oxide thin films deposited onto (0001) oriented Al₂O₃ monocrystalline substrate are presented. Thin films of uniform thickness, without cracks, and porosity were obtained. All deposited thin films (regardless of the film thickness or erbia (Er₂O₃) content) exhibited a columnar structure. In films stabilized with erbium, up to approx. 250 nm thickness, the columns have a diameter at the base from 25 to 75 nm. The columns densely and tightly fill the entire volume of the films. With increasing of the film thickness increases, porosity also significantly increases. In thin layers containing from 20 to 30 mole % Er₂O₃ the main identified phase at room temperature is Bi_1,5Er_0,5O₃. It is similar to the defective fluorite-type structure, and belongs to the Fm-3m space group. This phase corresponds to the structure of the high-temperature δ-Bi₂O₃ phase in pure bismuth oxide.

Słowa kluczowe

EN

Pulsed Laser Deposition; thin films; bismuth oxide; surface topography

• Wydawca: Institute of Metallurgy and Materials Science of Polish Academy of Sciences ; Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences
• Czasopismo: Archives of Metallurgy and Materials
• Rocznik: 2019
• Tom: Vol. 64, iss. 3
• Strony: 969--974
• Opis fizyczny: Bibliogr. 39 poz., fot., rys.

Twórcy

autor

Kąc S.

• AGH University of Science and Technology, Faculty of Metals Engineering and Industrial Computer Science, Al. Mickiewicza 30, 30-059 Krakow, Poland

autor

Szwachta G.

• AGH University of Science and Technology, Faculty of Metals Engineering and Industrial Computer Science, Al. Mickiewicza 30, 30-059 Krakow, Poland

autor

Cieniek Ł.

• AGH University of Science and Technology, Faculty of Metals Engineering and Industrial Computer Science, Al. Mickiewicza 30, 30-059 Krakow, Poland

autor

Moskalewicz T.

• AGH University of Science and Technology, Faculty of Metals Engineering and Industrial Computer Science, Al. Mickiewicza 30, 30-059 Krakow, Poland

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Uwagi

EN

1. Financial support from National Science Centre under Grant Number 2011/03/B/ST8/05152 is highly appreciated.

PL

2. Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).