The Behavioural Model of Graphene Field-effect Transistor

• Autorzy: Łuszczek Maciej , Turzyński Marek , Świsulski Dariusz

Identyfikatory

DOI

10.24425/ijet.2020.134037

• Języki publikacji: EN

Abstrakty

EN

The behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a “black box” with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-state characteristics taking also into account GFET capacitances. The authors’ model is defined by a relatively small number of equations which are not nested and all the parameters can be easily extracted. It was demonstrated that the proposed model allows to simulate the steady-state characteristics with the accuracy approximately as high as in the case of the physical model. The presented compact GFET model can be used for circuit or system-level simulations in the future.

Słowa kluczowe

EN

graphene field effect transistor; behavioural models; circuit simulation; sensors

• Wydawca: Polish Academy of Sciences, Committee of Electronics and Telecommunication
• Czasopismo: International Journal of Electronics and Telecommunications
• Rocznik: 2020
• Tom: Vol. 66, No. 4
• Strony: 753--758
• Opis fizyczny: Bibliogr. 20 poz., rys., tab., wykr.

Twórcy

autor

Łuszczek Maciej

• Gdańsk University of Technology, Faculty of Electrical and Control Engineering, Gdańsk, Poland

autor

Turzyński Marek

• Gdańsk University of Technology, Faculty of Electrical and Control Engineering, Gdańsk, Poland

autor

Świsulski Dariusz

• Gdańsk University of Technology, Faculty of Electrical and Control Engineering, Gdańsk, Poland

Bibliografia

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