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Dissolution Behavior of Metal Impurities and Improvement of Reclaimed Semiconductor Wafer Cleaning by Addition of Chelating Agent

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Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
As a wafer cleaning process, RCA (Radio Corporation of America) cleaning is mainly used. However, RCA cleaning has problems such as instability of bath life, re-adsorption of impurities and high-temperature cleaning. Herein, we tried to improve the purity of silicon wafers by using a chelating agent (oxalic acid) to solve these problems. Compounds produced by the reaction between the cleaning solution and each metal powder were identified by referring to the pourbaix diagram. All metals exhibited a particle size distribution of 10 μm or more before reaction, but a particle size distribution of 500 nm or less after reaction. In addition, it was confirmed that the metals before and after the reaction showed different absorbances. As a result of elemental analysis on the surface of the reclaimed silicon wafer cleaned through such a cleaning solution, it was confirmed that no secondary phase was detected other than Si.
Twórcy
autor
  • Dankook University, Department of Energy Engineering, Cheonan 31116, Republic of Korea
autor
  • Dankook University, Department of Energy Engineering, Cheonan 31116, Republic of Korea
autor
  • Dankook University, Department of Energy Engineering, Cheonan 31116, Republic of Korea
autor
  • Dankook University, Department of Energy Engineering, Cheonan 31116, Republic of Korea
Bibliografia
  • [1] K. Liu, D. Zuo, X. P. Li, M. Rahman, J. Vac. Sci. Technol. B: Microelectronics and Nanometer Structures 27 (3), 1361-1366 (2009).
  • [2] M. Kim, K. Ryu, K. J. Lee, J. Korean Powder Metall. Inst. 28 (1), 25-30 (2021)
  • [3] W. Kern, J. Electrochem. Soc. 137 (6), 1887-1892 (1990).
  • [4] O. J. Anttila, J. Electrochem. Soc. 139 (4), 1180-1185 (1992).
  • [5] K. Saga, J. Electrochem. Soc. 143 (10), 3279-3284 (1996).
  • [6] M. Itano, F. W. Kern, M. Miyashita, T. Ohmi, IEEE Trans. Semicond. Manuf. 6 (3), 258-267 (1993).
  • [7] W. Kern, Handbook of silicon wafer cleaning technology, united states 2018.
  • [8] M. Matsuo, T. Takahashi, H. Habuka, A. Goto, Mat. Sci. Semicon. Proc. 110, 104970 (2020).
  • [9] G. W. Gale, D. L. Rath, E. I. Cooper, S. Estes, H. F. Okorn-Schmidt, J. Brigante, R. Jagannathan, G. Settembre, E. Adams, J. Electrochem. Soc. 148 (9), G513-G516 (2001).
  • [10] D. Liu, Z. Li, Y. Zhu, Z. Li, R. Kumar, Carbohydr. polym. 111, 469-476 (2014).
  • [11] J. B. Fein, Geology 19 (10), 1037-1040 (1991).
  • [12] N. Zubair, K. Akhtar, Trans. Nonferrous Met. Soc. China 29 (1), 143-156 (2019).
  • [13] D. Nansheng, W. Feng, L. Fan, L. Zan, Chemosphere 35 (11), 2697-2706 (1997).
  • [14] A. K. Sharma, A. Singh, R. K. Mehta, S. Sharma, S. P. Bansal, K. S. Gupta, Int. J. Chem. Kinet. 43 (7), 379-392 (2011).
  • [15] M. Z. Mubarok, J. Lieberto, Procedia Earth Planet. Sci. 6, 457-464 (2013).
  • [16] D. Rai, B. M. Sass, D.A. Moore, Inorg. Chem. 26 (3), 345-349 (1987).
  • [17] C. H. Bamford, R. G. Compton, C. F. H. Tipper, Reactions of metallic salts and complexes, and organometallic compounds, Elsevier 1972.
Uwagi
1. This work was supported by Korea Technology & Information Promotion Agency for SMEs (TIPA) grant funded by the Ministry of SMEs and Startups (MSS) (S2825750).
2. Opracowanie rekordu ze środków MNiSW, umowa Nr 461252 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2021).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-dff36b81-8cca-4cf8-84d9-b981d78663d4
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