Application of TVS in electrostatic protection for SCB initiators

• Autorzy: Zhou B. , Gang R. , Li Y. , Jia X. , Wen L.

Warianty tytułu

PL

Zastosowanie układu TVS do elektrostatycznego zabezpieczenia inicjatora SCB

• Języki publikacji: EN

Abstrakty

EN

In an effort to avoid damages or unintentional firing of SCB initiators caused by ESD, three types of TVS chips are employed for electrostatic protection in this paper. The parameters and protection principles of TVS chips are analysed, and the appropriate TVS are selected to verify its ability for protecting SCB initiators from ESD. By electrostatic sensitivity experiments, the affection of TVS parameters on the electrostaticprotectioneffect is studied, the results show that the A type TVS chips can significantly protect SCB against static electricity, and the TVS chips with lower parasitic resistance and larger parasitic capacitance can enhance the anti-electrostatic capability of SCB initiators.

PL

W celu uniknięcia zniszczenia przez wypalenie inicjatora SCB sprawdzono trzy rodzaje zabezpieczeń TVS przed wyładowaniem elektrostatycznym. W wyniku eksperymentu stwierdzono że zabezpieczenie typu A chroni urządzenie przed wyładowaniem.

Słowa kluczowe

EN

initiators; SCB; TVS; anti-electrostatic

PL

inicjator SCB; wyładowanie elektrostatyczne

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Przegląd Elektrotechniczny
• Rocznik: 2013
• Tom: R. 89, nr 8
• Strony: 133--136
• Opis fizyczny: Bibliogr. 7 poz., schem., tab.

Twórcy

autor

Zhou B.

• School of Chemical Engineering, Nanjing University of Science & Technology, No. 1 Chemistry Building, Room 331. Nanjing 210094, Jiangsu, China

autor

Gang R.

• Institute of Chemical Materials, China Academy of Engineering Physics

autor

Li Y.

• School of Chemical Engineering, Nanjing University of Science & Technology, China

autor

Jia X.

• School of Chemical Engineering, Nanjing University of Science & Technology, China

autor

Wen L.

• School of Chemical Engineering, Nanjing University of Science & Technology, China

Bibliografia

• [1] T A Baginski, M E Baginski. A novel RF-insensitive EED utilizing an integrated metal-oxide-semiconductor structure
• [J]. Electromagnetic Compatibility, IEEE Transactions on, 32(1990):106-112
• [2] Tony L King, William W Tarbell. Pin-to-pin Electrostatic Discharge Protection for Semiconductor Bridges [R], SAND2002-2213 (2002)
• [3] Bin Zhou, Lin-shi Wang, Zhichun Qin, et al. A method of antielectrostatic discharge for semiconductor bridge initiators [J]. Initiators & pyrotechnics, 2(2010):5-7 (In Chinese)
• [4] Fei Chen, Bin Zhou, Zhichun Qin. Research on the mechanism of pin-to-pin ESD to SCB initiators [J]. Przeglad elektrotechniczny, 12(2011): 169-172
• [5] B Martinez-Tovar, J A. Montoya. Surface-connectable semiconductor bridge elements and devices including the same [P]. US Patent: 6054760 (2000)
• [6] B Martinez-Tovar, M C Foster, D B Novotney. Voltageprotected Semiconductor bridge igniter elements [P]. US Patent: 6199484 B1 (2001)
• [7] MIL-STD-331C. Fuze and fuze components, environmental and performances for [S].( 2005)