GaInNAs quantum-well vertical-cavity surface-emitting lasers emitting at 2.33 μm

• Autorzy: Piskorski Ł. , Sarzała R. P.
• Języki publikacji: EN

Abstrakty

EN

In the present paper, the comprehensive fully self-consistent optical-electrical-thermal-recombination model is used to determine the optimal structure of the possible GaInNAs quantum-well (QW) tunnel-junction (TJ) vertical-cavity surface-emitting lasers (VCSELs) with single-fundamental-mode operation at 2.33 μm wavelength suited for carbon monoxide sensing applications. From among various considered structures, the diode laser with 4-μm TJ and two 6-nm Ga_0.15In_0.85N_0.015As_0.985/Ga_0.327In_0.673As_0.71P_0.29 QWs has the lowest threshold current and seems to be optimal for the above applications. Higher threshold currents are obtained for Ga_0.15In_0.85N_0.015As_0.985/Al_0.138 -Ga_0.332In_0.530As QW structures but the latter can be grown in reactors without P source which are used for fabrication of GaAs-based devices. Both the modelled VCSELs offer a very promising room temperature continuous wave performance and may represent an alternative choice to GaSb-based lasers.

Słowa kluczowe

EN

simulation of a diode-laser operation; QW VCSELs; mid-infrared radiation; dilute nitrides

• Wydawca: Polska Akademia Nauk, Wydział IV Nauk Technicznych
• Czasopismo: Bulletin of the Polish Academy of Sciences. Technical Sciences
• Rocznik: 2013
• Tom: Vol. 61, nr 3
• Strony: 737--744
• Opis fizyczny: Bibliogr. 92 poz., wykr., rys., tab.

Twórcy

autor

Piskorski Ł.

• Photonics Group, Institute of Physics, Lodz University of Technology, 219 Wolczanska St., 90-924 Lodz, Poland

autor

Sarzała R. P.

• Photonics Group, Institute of Physics, Lodz University of Technology, 219 Wolczanska St., 90-924 Lodz, Poland

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