Low Offset, High PSRR, CMOS Bandgap Voltage Reference

• Autorzy: Zhao Y. , Lai X.

Warianty tytułu

PL

Pasmowy wzorzec napięcia z małym pełzaniem zera i dużym współczynnikiem PSRR

• Języki publikacji: EN

Abstrakty

EN

A CMOS Bandgap Voltage Reference (BVR) with the characteristics of low offset and high power-supply rejection ratio (PSRR) is presented. In order to reduce the effect of offset of operation amplifier (OPA), the voltage difference of base-emitter junctions of substrate bipolar transistors is maximized; meanwhile the factor of offset voltage could be minimized. The feedback loop constructed by proportional to absolute temperature (PTAT) current source and an OPA is employed to improve the PSRR. The circuit was designed and simulated in a standard 0.35-μm CMOS process, with a power supply of 3 volt. The relative accuracy is increased by 5 times compared with conventional circuit. PSRR of the circuit is ～108dB at low-frequency. Furthermore, temperature coefficient (TC) of 17ppm/℃ over a wide temperature range of －40～115℃.The whole circuit including the OPA draws only 22 μA from supply voltage. Silicon area is 0.037mm².

PL

Opisano pasmowy wzorzec napięcia w technologii CMOS charakteryzujący się małym pełzaniem zera i dużym współczynnikiem usuwania składowej zasilającej. Układ zaprojektowano w technologii 0.35μm z napięciem zasilania 3V.

Słowa kluczowe

EN

offset; PSRR; CMOS; PTAT

PL

wzorzec napięcia; technologia CMOS

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Przegląd Elektrotechniczny
• Rocznik: 2013
• Tom: R. 89, nr 1b
• Strony: 174--177
• Opis fizyczny: Bibliogr. 14 poz., tab., wykr.

Twórcy

autor

Zhao Y.

• Institute of Electronic CAD, Xidian University

autor

Lai X.

• Key Lab of High-speed Circuit Design and EMC, Ministry of Education

Bibliografia

• [1] Razavi, B. (2001).Design of analog CMOS integrated circuit. New York: McGraw-Hill.
• [2] Fayomi, C.J.B., Wirth, G.I., Achigui, H.F., & Matsuzawa, A. (2010). Sub 1V CMOS Bandgap reference design techniques: a survey. Analog Integrated Circuits and Signal Process, 62,141-157.
• [3] Gupta, V., & Rincon-Mora, G. A. (2002). Predicting the effects of error sources in bandgap reference circuits and evaluating their design implications. IEEEs Midwest Symposium on Circuits and Systems, (Vol.3, pp. III-575–III-578).
• [4] Gupta, V., & Rincon-Mora, G. A. (2005). Inside the belly of the beast: A map for the wary bandgap reference designer when confronting process variation. Power Management Design Line, Feb, 503–508.
• [5] Tham, K., & Nagaraj, K. (1995).A Low Supply Voltage High PSRR Voltage Reference in CMOS Process. IEEE Journal of Solid-State Circuits, 30(5), 586-590.
• [6] Mehrmanesh, S., Vahidfar, M.B., Aslanzadeh, H.A. &Atarodi, M. (2003).A 1-Volt, High PSRR, CMOS Bandgap Voltage Reference. Proceedings of IEEE International Symposium on Circuits and Systems (ISCAS), (Vol.1, pp.381-384).
• [7] Sengupta, S., Carastro, L. & Allen.P.E. (2005).Design considerations in Bandgap references over process variations. Proceedings of IEEE International Symposium on Circuits and Systems (ISCAS), 3869-3872.
• [8] Tajalli, A., Chahardori, M., & Abbas, K. (2010).An area and power optimization technique for CMOS Bandgap voltage references. Analog Integrated Circuits and Signal Process, 62,131-140.
• [9] Guan, X., Wang, X., Wang, A., & Zhao, B. (2010).A 3V 110μW 3.1ppm/℃ curvature-compensated CMOS bandgap reference. Analog Integrated Circuits and Signal Process, 62,113-119.
• [10] Hastings, A. (2001). The art of analog layout. Englewood Cliffs, NJ: Prentice-Hall.
• [11] Zhao Y., Lai X., Ye Q., He H., Du H., "Timing Circuit with Preheating/Ignition Function in Ballast ICs," Journal of Convergence Information Technology, V. 7, No. 8. 2012, pp. 19- 26.
• [12] He H., Lai X., Xu W., Zhao Y., Tian L., Du H., "High-speed gate driver with a simple structure for power MOSFET," Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University, V. 39, No. 2. 2012, pp. 168-74.
• [13] Zhao Y., Shi L., Lai X., He H., Liu C., Chen J., "Imitation of human eye visible light sensor," Journal of Convergence Information Technology, V. 7, No. 8. 2012, pp. 193-201.
• [14] Shi L., Liu Y., He H., Zhao Y., "Design of an infrared proximity sensor with environment noise suppression," Huazhong Keji Daxue Xuebao (Ziran Kexue Ban)/Journal of Huazhong University of Science and Technology (Natural Science Edition), V. 40, No. 2. 2012, pp. 71-6.