Electronic and optical properties of ternary alloys ZnxCd1−xS, ZnxCd1−xSe, ZnSxSe1−x, MgxZn1−xSe

Benchikh, K.; Abid, H.; Benchehima, M.

doi:10.1515/msp-2017-0005

Artykuł - szczegóły

Tytuł artykułu

Electronic and optical properties of ternary alloys ZnxCd1−xS, ZnxCd1−xSe, ZnSxSe1−x, MgxZn1−xSe

Autorzy

Benchikh K. , Abid H. , Benchehima M.

Wybrane pełne teksty z tego czasopisma

Identyfikatory

DOI

10.1515/msp-2017-0005

Warianty tytułu

Języki publikacji

Abstrakty

The empirical pseudopotential method (EPM) within the virtual crystal approximation (VCA) is used to calculate the electronic and optical properties of ternary alloys Zn_xCd_1-xS, Zn_xCd_1-xSe, ZnS_xSe_1-x and ZnS_xSe_1-x. The alloy band structures and energy gaps are calculated using VCA which incorporates the compositional disorder as an effective potential. The calculated band structures for the Zn_xCd_1-xS, Zn_xCd_1-xSe, ZnS_xSe_1-x and ZnS_xSe_1-x alloys show a direct band gap in the whole range of the concentration except for the ZnS_xSe_1-x alloy which presents a crossover from the direct gap to the indirect one.Also the dependence of the refractive index on the concentration is calculated for each ternary alloy. This parameter is found to depend nonlinearly on the alloy concentration. A detailed comparison of our results with experimental data and works of other authors has led to a good agreement.

Słowa kluczowe

electronic properties pseudopotential alloys zinc-blende VCA

Wydawca

De Gruyter

Czasopismo

Materials Science Poland

Rocznik

2017

Tom

Vol. 35, No. 1

Strony

32--39

Opis fizyczny

Bibliogr. 22 poz., rys., tab.

Twórcy

autor

Benchikh K.

k_benchikh2002@yahoo.fr

Applied Materials Laboratory, Djillali Liabes University, Sidi-Bel-Abbes 22000, Algeria

autor

Abid H.

Applied Materials Laboratory, Djillali Liabes University, Sidi-Bel-Abbes 22000, Algeria

autor

Benchehima M.

Bibliografia

[1] FUJITA S., Jpn. J. Appl. Phys., 54 (2015), 030101.
[2] ADACHI S., Properties of semiconductor alloys: Group IV, III-V and II-VI Semiconductors, John Wiley & Sons, Ltd., 2009.
[3] VETCHEN VAN J., BERGSTRESSER T., Phys. Rev. B, 1 (1970), 3351.
[4] HILL R., J. Phys. C Solid State Phys., 7 (1974), 521.
[5] JAROS M., Rep. Prog. Phys., 48 (1985), 1091.
[6] AYMERICH F., Phys. Rev. B, 26 (1982), 1968.
[7] KUKIMOTO H., Mater. Res. Soc. Sym. Proc., 161 (1990).
[8] BENDAIF S., BOUMAZA A., NEMIRI O., BOUBENDIRA K., MERADJI H., GHEMID S., EL HAJ HASSAN F., B. Mater. Sci., 38 (2015), 365.
[9] LEE S.G., CHANG K., Phys. Rev. B, 52 (1995), 1918.
[10] CAID M., RACHED H., RACHED D., KHENATA R., BIN OMRAN S., VASHNEY D., ABIDRI B., BENKHETTOU N., CHAHED A., BENHELLAL O., Mater. Sci.- Poland, 34 (2016), 115.
[11] BENSAID D., AMERI M., EL HANANI M., AZAZ Y., BENDOUMA M., AL-DOURI Y., AMERI I., Mater. Sci.-Poland, 32 (2014), 719.
[12] BOUKORTT A., ABBAR B., ABID H., SEHIL M., BENSAAD Z., SOUDINI B., Mater. Chem. Phys., 82 (2003), 911.
[13] BERGSTRESSER T., COHEN M.L., Phys. Rev., 164 (1967), 1069.
[14] CHARIFI Z., BAAZIZ Z., BOUARISSA N., Mater. Chem. Phys., 84 (2004), 273.
[15] KWON S.J., JEONG H.M., JUNG K., KO D.H., KO H., HAN I.K., KIM G.T., PARK J.G., ACS Nano, 9 (2015), 5486.
[16] TEO K., FENG Y., LI M., CHONG T., XIA J., Semicond. Sci. Tech., 9 (1994) 349.
[17] BENKABOU K., AOUMEUR F., ABID H., AMRANE N., Physica B, 337 (2003), 147.
[18] RUOFF A., Mater. Res. Soc. Symp. Proc., 22 (1984), 287.
[19] REDDY R., ANJANEYULU S., SARMA C., J. Phys. Chem. Solids, 54 (1993), 635.
[20] MOSS T., Proc. Phys. Soc. B, 63 (1950), 167.
[21] RAVINDRA N., SRIVASTAVA V., Infrared Phys. Techn., 19 (1979), 603.
[22] HERVE ´ P., VANDAMME L.K.J., Infrared Phys. Techn., 35 (1994), 609.

Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).

Typ dokumentu

Bibliografia

Identyfikator YADDA

bwmeta1.element.baztech-dd553f4b-210f-441d-90bf-887fbac1bf5d